| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An investigation into the behaviour of trapping centres in microplasmas
|
Nuttall, K.I.
|
|
1975
|
18 |
1 |
p. 13-23
11 p.
|
artikel
|
| 2 |
A simple formula of the maximum electrical field in an abrupt junction in the presence of an inversion layer
|
Jespers, P.
|
|
1975
|
18 |
1 |
p. 105-106
2 p.
|
artikel
|
| 3 |
A treatment of impurity diffusion in oxidizing ambients
|
Guckel, H.
|
|
1975
|
18 |
1 |
p. 99-104
6 p.
|
artikel
|
| 4 |
Comments on the generalized Einstein relation for semiconductors
|
Nag, B.R.
|
|
1975
|
18 |
1 |
p. 109-110
2 p.
|
artikel
|
| 5 |
Correction factor for resistivity and Hall mobility measurement of two-layer structures by spreading resistance techniques
|
Gútai, L.
|
|
1975
|
18 |
1 |
p. 93-97
5 p.
|
artikel
|
| 6 |
Determination of the density and the relaxation time of silicon-metal interfacial states
|
Barret, C.
|
|
1975
|
18 |
1 |
p. 25-27
3 p.
|
artikel
|
| 7 |
Dielectric film thickness measurement from the reflection relations
|
Sandera, M.
|
|
1975
|
18 |
1 |
p. 110-112
3 p.
|
artikel
|
| 8 |
Die rekombination in thyristoren und gleichrichtern aus silizium: Ihr einfluss auf die durchlasskennlinie und das freiwerdezeitverhalten
|
Burtscher, J.
|
|
1975
|
18 |
1 |
p. 35-63
29 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
1975
|
18 |
1 |
p. IFC-
1 p.
|
artikel
|
| 10 |
High-frequency 1 ƒ noise of photocurrent and residual conductivity in CdS
|
Lukyanchikova, N.B.
|
|
1975
|
18 |
1 |
p. 65-70
6 p.
|
artikel
|
| 11 |
IMPATT oscillators with enhanced leakage current
|
Cottrell, P.E.
|
|
1975
|
18 |
1 |
p. 1-12
12 p.
|
artikel
|
| 12 |
On the determination of the minority carrier lifetime from the reverse recovery transient of pnR diodes
|
Lewis, David C.
|
|
1975
|
18 |
1 |
p. 87-91
5 p.
|
artikel
|
| 13 |
Parametric studies and optimization of the beta-voltaic cell—II open-circuit voltage and power efficiencies
|
Wei, Lawrence S.
|
|
1975
|
18 |
1 |
p. 71-77
7 p.
|
artikel
|
| 14 |
Stationary room temperature MOS-C deep-depletion characteristics
|
Pierret, R.F.
|
|
1975
|
18 |
1 |
p. 79-85
7 p.
|
artikel
|
| 15 |
The influence of heat treatment and ambient atmosphere on the In-CdS junction photovoltage
|
Reed, C.E.
|
|
1975
|
18 |
1 |
p. 29-33
5 p.
|
artikel
|
| 16 |
The modified fletcher boundary conditions
|
Nussbaum, Allen
|
|
1975
|
18 |
1 |
p. 107-109
3 p.
|
artikel
|
Tijdschrift beschrijving