| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A fast small signal modeling method for GaN HEMTs
|
Zhao, Ziyue
|
|
|
175 |
C |
p.
|
artikel
|
| 2 |
A low-power nanoelectromechanical (NEM) device with Al-doped HfO2-based ferroelectric capacitor
|
Kim, Shinhee
|
|
|
175 |
C |
p.
|
artikel
|
| 3 |
Analysis of the transient body effect model for an LTPS TFT on a plastic substrate
|
Choi, Yunyeong
|
|
|
175 |
C |
p.
|
artikel
|
| 4 |
Continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs
|
Oproglidis, T.A.
|
|
|
175 |
C |
p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
|
175 |
C |
p.
|
artikel
|
| 6 |
Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
|
Yang, Guangan
|
|
|
175 |
C |
p.
|
artikel
|
| 7 |
2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure
|
Xu, Ru
|
|
|
175 |
C |
p.
|
artikel
|
| 8 |
Mechanism of Proton-Induced electrical degradation of AlGaN/GaN high electron mobility transistors
|
Kim, Dong-Seok
|
|
|
175 |
C |
p.
|
artikel
|
| 9 |
Origin of Incremental Step Pulse Programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash
|
Nam, Kihoon
|
|
|
175 |
C |
p.
|
artikel
|
| 10 |
The characterization of the built-in bipolar junction transistor in H-gate PD-SOI NMOS
|
Zhu, Huilong
|
|
|
175 |
C |
p.
|
artikel
|
| 11 |
Vertical growth characterization of InAs nanowires grown by selective area growth on patterned InP(111)B substrate by a MOCVD method
|
Song, Chang-Hun
|
|
|
175 |
C |
p.
|
artikel
|
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