| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A computer study of power-limiter diode behavior
|
Kurata, Mamoru
|
|
1974
|
17 |
9 |
p. 951-961
11 p.
|
artikel
|
| 2 |
Application of the small-signal transmission line equivalent circuit model to the a.c., d.c. and transient analysis of semiconductor devices
|
Green, M.A.
|
|
1974
|
17 |
9 |
p. 941-949
9 p.
|
artikel
|
| 3 |
Avalanche-injected electron currents in SiO2 at high injection densities
|
Verwey, J.F.
|
|
1974
|
17 |
9 |
p. 963-971
9 p.
|
artikel
|
| 4 |
Avalanche multiplication in GaSb pn-junctions
|
Haecker, Walter
|
|
1974
|
17 |
9 |
p. 993-994
2 p.
|
artikel
|
| 5 |
Calculations of collector current variation in bipolar transistors
|
Poon, H.C.
|
|
1974
|
17 |
9 |
p. 973-975
3 p.
|
artikel
|
| 6 |
Determination of the electric field in a Hall generator under influence of an alternating magnetic field
|
de Mey, G.
|
|
1974
|
17 |
9 |
p. 977-979
3 p.
|
artikel
|
| 7 |
Erratum
|
|
|
1974
|
17 |
9 |
p. 1000-
1 p.
|
artikel
|
| 8 |
Forward I-V characteristics of Pt/n-GaAs Schottky barrier contacts
|
Murarka, Shyam P.
|
|
1974
|
17 |
9 |
p. 985-991
7 p.
|
artikel
|
| 9 |
Frequency and temperature dependence of the small signal capacitance of reverse biased if GaP/Zn,O/p-n junctions
|
Ferenczi, G.
|
|
1974
|
17 |
9 |
p. 897-902
6 p.
|
artikel
|
| 10 |
Influence of carriers on the capacitance of p-n junctions with deep donors
|
Smiljanić, M.
|
|
1974
|
17 |
9 |
p. 931-939
9 p.
|
artikel
|
| 11 |
Influence of clock waveforms on the performance of charge coupled devices
|
Brotherton, S.D.
|
|
1974
|
17 |
9 |
p. 981-984
4 p.
|
artikel
|
| 12 |
Investigation of the anomalous photovoltage in CdTe films
|
Quartly, J.R.
|
|
1974
|
17 |
9 |
p. 998-IN2
nvt p.
|
artikel
|
| 13 |
On the initial value of transient photocurrents in silicon
|
Norde, H.
|
|
1974
|
17 |
9 |
p. 996-998
3 p.
|
artikel
|
| 14 |
Spectroscopy of impurity levels by measuring the microplasma turn on probabilities in GaP/Zn,O/diodes
|
Ferenczi, G.
|
|
1974
|
17 |
9 |
p. 903-911
9 p.
|
artikel
|
| 15 |
Surface breakdown in silicon planar junctions—A computer-aided experimental determination of the critical field
|
Bulucea, C.
|
|
1974
|
17 |
9 |
p. 881-888
8 p.
|
artikel
|
| 16 |
Surface-state spectra from thick-oxide MOS tunnel junctions
|
Ma, T.P.
|
|
1974
|
17 |
9 |
p. 913-929
17 p.
|
artikel
|
| 17 |
The measurement of the charge residual for CCD transfer using impulse and frequency responses
|
Vanstone, G.F.
|
|
1974
|
17 |
9 |
p. 889-895
7 p.
|
artikel
|
| 18 |
The optical writing of MNOS memory with Au deep traps
|
Koike, S.
|
|
1974
|
17 |
9 |
p. 994-996
3 p.
|
artikel
|
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