nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Bias-dependent small-signal parameters of Schottky contact microstrip lines
|
Jäger, Dieter |
|
1974 |
17 |
8 |
p. 777-783 7 p. |
artikel |
2 |
Calculation of the turn-on behavior of most
|
Zahn, Martin E. |
|
1974 |
17 |
8 |
p. 843-854 12 p. |
artikel |
3 |
Contact potential measurements on thin SiO2 films
|
Bess, M. |
|
1974 |
17 |
8 |
p. 813-817 5 p. |
artikel |
4 |
Dislocations in GaAs produced by device fabrication
|
Hartnagel, H. |
|
1974 |
17 |
8 |
p. 799-803 5 p. |
artikel |
5 |
Drift mobility measurements in thin epitaxial semiconductor layers using time-of-flight techniques
|
Evans, A.G.R. |
|
1974 |
17 |
8 |
p. 805-812 8 p. |
artikel |
6 |
High-temperature stability of Au Pt/n-GaAs Schottky barrier diodes
|
Murarka, Shyam P. |
|
1974 |
17 |
8 |
p. 869-876 8 p. |
artikel |
7 |
Inversion layer at the interface of Schottky diodes
|
Demoulin, E. |
|
1974 |
17 |
8 |
p. 825-833 9 p. |
artikel |
8 |
Material and device properties of heteroepitaxial GaAs on BeO
|
Thorsen, Arthur C. |
|
1974 |
17 |
8 |
p. 855-862 8 p. |
artikel |
9 |
Modified relation for plastic deformation diffusion enhancement factor
|
Jain, R.K. |
|
1974 |
17 |
8 |
p. 877-879 3 p. |
artikel |
10 |
Noise and hot carrier effects in a single injection solid state diode
|
Gisolf, A. |
|
1974 |
17 |
8 |
p. 839-841 3 p. |
artikel |
11 |
Observation of the initial phases of thyristor turn-on
|
Voss, Peter |
|
1974 |
17 |
8 |
p. 879-880 2 p. |
artikel |
12 |
On heavy doping effects and the injection efficiency of silicon transistors
|
Mock, M.S. |
|
1974 |
17 |
8 |
p. 819-824 6 p. |
artikel |
13 |
Reverse bias light emission from GaAs1-x P x diodes
|
Konidaris, S. |
|
1974 |
17 |
8 |
p. 863-868 6 p. |
artikel |
14 |
The diffuse scattering model of effective mobility in the strongly inverted layer of MOS transistors
|
Baccarani, G. |
|
1974 |
17 |
8 |
p. 785-789 5 p. |
artikel |
15 |
The work function difference of the MOS-system with aluminium field plates and polycrystalline silicon field plates
|
Werner, Wolfgang M. |
|
1974 |
17 |
8 |
p. 769-775 7 p. |
artikel |
16 |
Very low resistance NiAuGeNi contacts to n-GaAs
|
Heime, K. |
|
1974 |
17 |
8 |
p. 835-837 3 p. |
artikel |
17 |
VMOS—A new MOS integrated circuit technology
|
Holmes, F.E. |
|
1974 |
17 |
8 |
p. 791-797 7 p. |
artikel |