| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A thyristor protected against di/dt failure at breakover turn-on
|
Voss, Peter
|
|
1974
|
17 |
7 |
p. 655-661
7 p.
|
artikel
|
| 2 |
AuSiC Schottky barrier diodes
|
Wu, S.Y.
|
|
1974
|
17 |
7 |
p. 683-687
5 p.
|
artikel
|
| 3 |
Depletion-layer characterisation of single-diffused p-n junctions
|
Basavaraj, T.N.
|
|
1974
|
17 |
7 |
p. 765-767
3 p.
|
artikel
|
| 4 |
Determination of surface state density in tunnel MOS devices from current-voltage characteristic
|
Walker, Laurence G.
|
|
1974
|
17 |
7 |
p. 763-765
3 p.
|
artikel
|
| 5 |
Effect of mobile carrier diffusion and its treatment in simulation programs for p-i-n switches and limiters
|
Rose, F.W.G.
|
|
1974
|
17 |
7 |
p. 761-762
2 p.
|
artikel
|
| 6 |
Electrical characteristics of the SiO2Si interface near midgap and in weak inversion
|
Cooper Jr., J.A.
|
|
1974
|
17 |
7 |
p. 641-654
14 p.
|
artikel
|
| 7 |
Hall mobility in dielectrically isolated single-crystal silicon films defined by electrochemical etching
|
Kamins, T.I.
|
|
1974
|
17 |
7 |
p. 667-674
8 p.
|
artikel
|
| 8 |
Inversion charge redistribution model of the high-frequency MOS capacitance
|
Berman, Arnold
|
|
1974
|
17 |
7 |
p. 735-742
8 p.
|
artikel
|
| 9 |
Minority-carrier lifetime in dielectrically isolated single-crystal silicon films defined by electrochemical etching
|
Kamins, T.I.
|
|
1974
|
17 |
7 |
p. 675-681
7 p.
|
artikel
|
| 10 |
New techniques for the study of Gunn diode contacts
|
Gurney, W.S.C.
|
|
1974
|
17 |
7 |
p. 743-750
8 p.
|
artikel
|
| 11 |
Questionability of drift-diffusion transport in the analysis of small semiconductor devices
|
Rohr, Peter
|
|
1974
|
17 |
7 |
p. 729-734
6 p.
|
artikel
|
| 12 |
Radiation effects in n-channel MOSFETS
|
Onnasch, Dietrich
|
|
1974
|
17 |
7 |
p. 663-666
4 p.
|
artikel
|
| 13 |
Reformulation of basic semiconductor transport equations—II
|
Parrott, J.E.
|
|
1974
|
17 |
7 |
p. 707-716
10 p.
|
artikel
|
| 14 |
Some measurements of the transient behaviour of high field domains in InP
|
Prew, Brian A.
|
|
1974
|
17 |
7 |
p. 725-728
4 p.
|
artikel
|
| 15 |
Some properties concerning the a.c. impedance of P-I-N and P-N-N+ diodes
|
Varshney, R.C.
|
|
1974
|
17 |
7 |
p. 699-706
8 p.
|
artikel
|
| 16 |
The GaAs inversion-type MIS transistors
|
Ito, Takashi
|
|
1974
|
17 |
7 |
p. 751-759
9 p.
|
artikel
|
| 17 |
The general transmission line equivalent circuit model for degenerate and non-degenerate carrier concentrations in semiconductors
|
Green, M.A.
|
|
1974
|
17 |
7 |
p. 717-723
7 p.
|
artikel
|
| 18 |
Thermal noise in the trap free insulated diode with thermal free carriers
|
Sharma, Y.K.
|
|
1974
|
17 |
7 |
p. 762-763
2 p.
|
artikel
|
| 19 |
The role of radiation damage on the current-voltage characteristics of p-n junctions
|
Ashburn, Peter
|
|
1974
|
17 |
7 |
p. 689-698
10 p.
|
artikel
|
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