| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A theory for computer evaluation and comparison of experimental CV curves of MOS capacitors
|
Liblich, S.
|
|
1974
|
17 |
6 |
p. 636-637
2 p.
|
artikel
|
| 2 |
Correlation coefficient of gate and drain flicker noise
|
Hayashi, A.
|
|
1974
|
17 |
6 |
p. 637-639
3 p.
|
artikel
|
| 3 |
Current diffusion effects in titanium-N silicon schottky diodes
|
Wilkinson, J.M.
|
|
1974
|
17 |
6 |
p. 583-585
3 p.
|
artikel
|
| 4 |
Current pulses in planar GaAs gunn devices
|
Schlachetzki, Andreas
|
|
1974
|
17 |
6 |
p. 633-635
3 p.
|
artikel
|
| 5 |
Diffusion of zinc in indium phosphide at 700°C
|
Hooper, A.
|
|
1974
|
17 |
6 |
p. 531-534
4 p.
|
artikel
|
| 6 |
Drain voltage limitations of MOS transistors
|
Bateman, Ian M.
|
|
1974
|
17 |
6 |
p. 539-550
12 p.
|
artikel
|
| 7 |
Effect of O+ implantation on silicon-silicon dioxide interface properties
|
Sproul, M.E.
|
|
1974
|
17 |
6 |
p. 577-582
6 p.
|
artikel
|
| 8 |
Electrical characteristics of boron-implanted n-channel MOS transistors
|
Kamoshida, Mototaka
|
|
1974
|
17 |
6 |
p. 621-626
6 p.
|
artikel
|
| 9 |
Excess noise measurements in ion-implanted silicon resistors
|
Bilger, H.R.
|
|
1974
|
17 |
6 |
p. 599-605
7 p.
|
artikel
|
| 10 |
Famos—A new semiconductor charge storage device
|
Frohman-Bentchkowsky, Dov
|
|
1974
|
17 |
6 |
p. 517-528
12 p.
|
artikel
|
| 11 |
Low noise photodetector circuits using FET's
|
Tandon, J.C.
|
|
1974
|
17 |
6 |
p. 607-609
3 p.
|
artikel
|
| 12 |
Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—II. Experiment
|
Shewchun, J.
|
|
1974
|
17 |
6 |
p. 563-572
10 p.
|
artikel
|
| 13 |
Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory
|
Green, M.A.
|
|
1974
|
17 |
6 |
p. 551-561
11 p.
|
artikel
|
| 14 |
On the behaviour of forward biased silicon diodes at low temperatures
|
Aldridge, Richard V.
|
|
1974
|
17 |
6 |
p. 617-619
3 p.
|
artikel
|
| 15 |
Preparation and lifetest of niobium Josephson junction tunnel diodes and arrays
|
Rissman, Paul
|
|
1974
|
17 |
6 |
p. 611-612
2 p.
|
artikel
|
| 16 |
Preparation and properties of plasma-anodized silicon dioxide films
|
Pulfrey, D.L.
|
|
1974
|
17 |
6 |
p. 627-628
2 p.
|
artikel
|
| 17 |
Properties of GaP light-emitting diodes grown on spinel substrates
|
Ladany, I.
|
|
1974
|
17 |
6 |
p. 573-574
2 p.
|
artikel
|
| 18 |
Recombination oscillations in double-injection devices
|
Vasi, J.
|
|
1974
|
17 |
6 |
p. 513-515
3 p.
|
artikel
|
| 19 |
Structure of the Langevin and impedance-field methods of calculating noise in devices
|
Thornber, K.K.
|
|
1974
|
17 |
6 |
p. 587-590
4 p.
|
artikel
|
| 20 |
Trapping, emission and generation in MNOS memory devices
|
Wei, L.S.
|
|
1974
|
17 |
6 |
p. 591-598
8 p.
|
artikel
|
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