| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An investigation of the effect of two-band model of the barrier on the tunnelling characteristics of degenerate MIS diodes
|
Temple, V.A.K.
|
|
1974
|
17 |
5 |
p. 417-426
10 p.
|
artikel
|
| 2 |
Auger-rekombination im mittelgebiet durchlassbelasteter silizium-gleichrichter und -thyristoren
|
Krausse, J.
|
|
1974
|
17 |
5 |
p. 427-429
3 p.
|
artikel
|
| 3 |
Effective distribution coefficients of some group VI elements in indium phosphide grown by liquid phase epitaxy
|
Brown, Kenneth E.
|
|
1974
|
17 |
5 |
p. 505-507
3 p.
|
artikel
|
| 4 |
Effect of injection efficiency and dimensions on the performance of a forward biased P +−I alloyed junction
|
Jain, G.C.
|
|
1974
|
17 |
5 |
p. 431-438
8 p.
|
artikel
|
| 5 |
Effect of spot size on the determination of the diffusion length of minority carriers in p−n junctions using scanned light- or electron-beam techniques
|
Lengyel, Gabriel
|
|
1974
|
17 |
5 |
p. 510-512
3 p.
|
artikel
|
| 6 |
Electronic properties of undoped polycrystalline silicon
|
Muñoz, E.
|
|
1974
|
17 |
5 |
p. 439-446
8 p.
|
artikel
|
| 7 |
Error analysis of high-frequency MOS capacitance calculations
|
Brews, J.R.
|
|
1974
|
17 |
5 |
p. 447-456
10 p.
|
artikel
|
| 8 |
Factors affecting avalanche injection into insulating layers from a semiconductor surface
|
Card, H.C.
|
|
1974
|
17 |
5 |
p. 501-502
2 p.
|
artikel
|
| 9 |
Gate-enhanced vs channel-current induced breakdown for floating gate avalanche injection
|
Müller, R.G.
|
|
1974
|
17 |
5 |
p. 503-505
3 p.
|
artikel
|
| 10 |
Inclusion of carrier temperature effects in a thermionic-diffusion theory of the schottky barrier
|
Stokoe, T.Y.
|
|
1974
|
17 |
5 |
p. 477-484
8 p.
|
artikel
|
| 11 |
Numerical methods for the charge transfer analysis of charge-coupled devices
|
Chan, C.H.
|
|
1974
|
17 |
5 |
p. 491-499
9 p.
|
artikel
|
| 12 |
Space-charge-limited (SCL) effects in thin, Cu compensated CdS structures
|
McGarthy, S.J.
|
|
1974
|
17 |
5 |
p. 485-489
5 p.
|
artikel
|
| 13 |
Temperature dependence of the tunnel current in sandwiches: Does the barrier change with temperature?
|
Kadlec, J.
|
|
1974
|
17 |
5 |
p. 469-475
7 p.
|
artikel
|
| 14 |
The built-in voltage and space charge layer capacitance of p−n junctions
|
Kuźmicz, Wieslaw
|
|
1974
|
17 |
5 |
p. 457-463
7 p.
|
artikel
|
| 15 |
The emitter-base breakdown voltage of planar transistors
|
Wilson, P.R.
|
|
1974
|
17 |
5 |
p. 465-467
3 p.
|
artikel
|
| 16 |
Transit time in the base region of drift transistors considering recombination and variable mobility
|
El-Shandwily, M.E.
|
|
1974
|
17 |
5 |
p. 507-509
3 p.
|
artikel
|
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