| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Arsenosilica film source for microwave transistor
|
Parekh, P.C.
|
|
1974
|
17 |
4 |
p. 395-396
2 p.
|
artikel
|
| 2 |
A theoretical analysis of C.C.D. operation with square clock pulses
|
Brotherton, S.D.
|
|
1974
|
17 |
4 |
p. 341-348
8 p.
|
artikel
|
| 3 |
A transistor with simultaneously diffused emitter and base
|
Sandow, Peter M.
|
|
1974
|
17 |
4 |
p. 404-406
3 p.
|
artikel
|
| 4 |
Books received
|
|
|
1974
|
17 |
4 |
p. 415-
1 p.
|
artikel
|
| 5 |
Current multiplication in metal-insulator-semiconductor (MIS) tunnel diodes
|
Green, M.A.
|
|
1974
|
17 |
4 |
p. 349-365
17 p.
|
artikel
|
| 6 |
Die räumliche verteilung der rekombination in durchlassbelasteten silizium-gleichrichtern und -thyristoren
|
Krausse, J.
|
|
1974
|
17 |
4 |
p. 329-333
5 p.
|
artikel
|
| 7 |
Effect of a modified theory of generation currents on an experimental determination of carrier lifetime
|
Roberts, P.C.T.
|
|
1974
|
17 |
4 |
p. 403-404
2 p.
|
artikel
|
| 8 |
Effects of intrinsic region width in Si(Li) p-i-n diodes
|
Harman, Thomas L.
|
|
1974
|
17 |
4 |
p. 408-411
4 p.
|
artikel
|
| 9 |
High frequency space charge layer capacitance of strongly inverted semiconductor surfaces
|
McNutt, M.J.
|
|
1974
|
17 |
4 |
p. 377-385
9 p.
|
artikel
|
| 10 |
Interface studies of the MOS-structure by transfer-admittance measurements
|
Koomen, Jan
|
|
1974
|
17 |
4 |
p. 321-328
8 p.
|
artikel
|
| 11 |
Low-noise implanted-base microwave transistors
|
Archer, J.A.
|
|
1974
|
17 |
4 |
p. 387-393
7 p.
|
artikel
|
| 12 |
Negative resistance characteristics in Au-polycrystalline GaAs barriers
|
Piqueras, J.
|
|
1974
|
17 |
4 |
p. 406-
1 p.
|
artikel
|
| 13 |
Normalized characteristic of saturated high-field MOSFET's
|
van der Ziel, A.
|
|
1974
|
17 |
4 |
p. 413-414
2 p.
|
artikel
|
| 14 |
Reverse diode characteristics of evaporated Au on n-silicon diodes
|
Tove, P.A.
|
|
1974
|
17 |
4 |
p. 411-412
2 p.
|
artikel
|
| 15 |
Saturation capacitance of thin oxide MOS structures and the effective surface density of states of silicon
|
Maserjian, J.
|
|
1974
|
17 |
4 |
p. 335-339
5 p.
|
artikel
|
| 16 |
Study of charge storage behavior in metal-alumina-silicon dioxide-silicon(MAOS) field effect transistor
|
Sato, Shuichi
|
|
1974
|
17 |
4 |
p. 367-375
9 p.
|
artikel
|
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