nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A correction to the calculation of the semiconductor work function and its implication for the effective density of charges
|
|
|
1974 |
17 |
2 |
p. 215-216 2 p. |
artikel |
2 |
A method for the determination of electron capture cross-section at imperfection centers in gallium arsenide of electroluminescent diodes
|
Lo, Wayne |
|
1974 |
17 |
2 |
p. 113-116 4 p. |
artikel |
3 |
A study of the power handling ability of gallium arsenide and silicon, single and double drift IMPATT diodes
|
O'Hara, S. |
|
1974 |
17 |
2 |
p. 137-153 17 p. |
artikel |
4 |
Characterization of multiple deep level systems in semiconductor junctions by admittance measurements
|
Beguwala, M. |
|
1974 |
17 |
2 |
p. 203-214 12 p. |
artikel |
5 |
Determination of the energy distribution of interface traps in MIS systems using non-steady-state techniques
|
Mar, H.A. |
|
1974 |
17 |
2 |
p. 131-135 5 p. |
artikel |
6 |
Fabrication and some applications of large-area silicon field emission arrays
|
Thomas, R.N. |
|
1974 |
17 |
2 |
p. 155-163 9 p. |
artikel |
7 |
Photoeffect in junction field effect transistors with drift velocity saturation
|
Lehovec, Kurt |
|
1974 |
17 |
2 |
p. 185-192 8 p. |
artikel |
8 |
Quenched-in centers in silicon p + n junctions
|
Yau, L.D. |
|
1974 |
17 |
2 |
p. 193-201 9 p. |
artikel |
9 |
The collector-base avalanche voltage of epitaxial transistors
|
Wilson, P.R. |
|
1974 |
17 |
2 |
p. 179-183 5 p. |
artikel |
10 |
Theory of non-steady-state interfacial thermal currents in MOS devices, and the direct determination of interfacial trap parameters
|
Simmons, J.G. |
|
1974 |
17 |
2 |
p. 125-130 6 p. |
artikel |
11 |
Theory of transient emission current in MOS devices and the direct determination interface trap parameters
|
Simmons, J.G. |
|
1974 |
17 |
2 |
p. 117-124 8 p. |
artikel |
12 |
Two-piece model of hot point generation in reverse biased p−n diodes
|
Luque, Antonio |
|
1974 |
17 |
2 |
p. 165-177 13 p. |
artikel |