| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis and measurement of carrier lifetimes in the various operating modes of power devices
|
Cornu, J.
|
|
1974
|
17 |
10 |
p. 1099-1106
8 p.
|
artikel
|
| 2 |
A simple theory to predict the threshold voltage of short-channel IGFET's
|
Yau, L.D.
|
|
1974
|
17 |
10 |
p. 1059-1063
5 p.
|
artikel
|
| 3 |
A small signal analysis of an impatt device having two avalanche layers interspaced by a drift layer
|
Som, B.
|
|
1974
|
17 |
10 |
p. 1029-1038
10 p.
|
artikel
|
| 4 |
Dependence of barrier height on energy gap in Au n-type GaAs 1−x P x Schottky diodes
|
Rideout, V.Leo
|
|
1974
|
17 |
10 |
p. 1107-1108
2 p.
|
artikel
|
| 5 |
Effect of temperature and voltage sweep rate on C ƒ- V characteristics of MIS capacitors
|
Wei, L.S.
|
|
1974
|
17 |
10 |
p. 1021-1028
8 p.
|
artikel
|
| 6 |
Field-enhanced carrier generation in MOS capacitors
|
Calzolari, P.U.
|
|
1974
|
17 |
10 |
p. 1001-1011
11 p.
|
artikel
|
| 7 |
Inviance of the Hall effect MOSFET to gate geometry
|
Hemmert, Richard S.
|
|
1974
|
17 |
10 |
p. 1039-1043
5 p.
|
artikel
|
| 8 |
Model of doped-oxide-source diffusion in silicon
|
Ghoshtagore, R.N.
|
|
1974
|
17 |
10 |
p. 1065-1073
9 p.
|
artikel
|
| 9 |
On noise analyses in bulk semiconductors
|
Haus, H.A.
|
|
1974
|
17 |
10 |
p. 1075-1081
7 p.
|
artikel
|
| 10 |
On the variation of cut-off frequency at high injection level with emitter end concentration of a diffused base transistor
|
Daw, A.N.
|
|
1974
|
17 |
10 |
p. 1108-1110
3 p.
|
artikel
|
| 11 |
Parametric studies and optimization of the beta-voltaic cell—I. Short-circuit current
|
Wei, Lawrence S.
|
|
1974
|
17 |
10 |
p. 1091-1098
8 p.
|
artikel
|
| 12 |
Power law reverse current-voltage characteristic in Schottky barriers
|
Levine, Jules D.
|
|
1974
|
17 |
10 |
p. 1083-1086
4 p.
|
artikel
|
| 13 |
Some aspects of current gain variations in bipolar transistors
|
Rey, G.
|
|
1974
|
17 |
10 |
p. 1045-1057
13 p.
|
artikel
|
| 14 |
Striations als ursache von knickstellen in pn-// u ̈ berg a ̈ ngen von leistungsbauelementen
|
Kolbesen, B.O.
|
|
1974
|
17 |
10 |
p. 1087-1090
4 p.
|
artikel
|
| 15 |
Widerstandsanomalie in halbleitender BaTiO3-keramik im Bereich unterhalb der Curietemperatur
|
Brauer, H.
|
|
1974
|
17 |
10 |
p. 1013-1019
7 p.
|
artikel
|
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