| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A BIMOS-based 2T1C analogue spiking neuron circuit integrated in 28 nm FD-SOI technology for neuromorphic application
|
Bédécarrats, Thomas
|
|
|
168 |
C |
p.
|
artikel
|
| 2 |
A method for threshold voltage extraction in junctionless MOSFETs using the derivative of transconductance-to-current ratio
|
Rudenko, T.
|
|
|
168 |
C |
p.
|
artikel
|
| 3 |
Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors
|
Cazimajou, T.
|
|
|
168 |
C |
p.
|
artikel
|
| 4 |
A2RAM compact modeling: From DC to 1T-DRAM memory operation
|
Wakam, F. Tcheme
|
|
|
168 |
C |
p.
|
artikel
|
| 5 |
Behavior of gold-doped silicon substrate under small- and large-RF signal
|
Nabet, Massinissa
|
|
|
168 |
C |
p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
|
168 |
C |
p.
|
artikel
|
| 7 |
Electron-hole bilayer light-emitting device: Concept and operation
|
Gupta, Gaurav
|
|
|
168 |
C |
p.
|
artikel
|
| 8 |
Experimental and simulation investigation of the out-of-equilibrium phenomena on the pseudo-MOSFET configuration under transient linear voltage ramps
|
Alepidis, Miltiadis
|
|
|
168 |
C |
p.
|
artikel
|
| 9 |
Foreword
|
|
|
|
168 |
C |
p.
|
artikel
|
| 10 |
Hafnia and alumina stacks as UTBOXs in silicon-on insulator
|
Popov, V.P.
|
|
|
168 |
C |
p.
|
artikel
|
| 11 |
In-situ heater for thermal assist recovery of MOS devices in 28 nm UTBB FD-SOI CMOS technology
|
Galy, P.
|
|
|
168 |
C |
p.
|
artikel
|
| 12 |
Inter-tier electrostatic coupling effects in 3D sequential integration devices and circuits
|
Sideris, P.
|
|
|
168 |
C |
p.
|
artikel
|
| 13 |
Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs
|
Boudier, D.
|
|
|
168 |
C |
p.
|
artikel
|
| 14 |
Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications
|
Veloso, A.
|
|
|
168 |
C |
p.
|
artikel
|
| 15 |
New DG FeFET topology with enhanced SS and non-hysteretic behavior
|
Gnani, E.
|
|
|
168 |
C |
p.
|
artikel
|
| 16 |
Novel fine-grain back-bias assist techniques for 3D-monolithic 14 nm FDSOI top-tier SRAMs
|
Bosch, D.
|
|
|
168 |
C |
p.
|
artikel
|
| 17 |
Novel on-resistance based methodology for MOSFET electrical characterization
|
Karatsori, T.A.
|
|
|
168 |
C |
p.
|
artikel
|
| 18 |
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization
|
Pilotto, A.
|
|
|
168 |
C |
p.
|
artikel
|
| 19 |
Photodiode with low dark current built in silicon-on-insulator using electrostatic doping
|
Liu, J.
|
|
|
168 |
C |
p.
|
artikel
|
| 20 |
Post-process porous silicon for 5G applications
|
Scheen, Gilles
|
|
|
168 |
C |
p.
|
artikel
|
| 21 |
Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature
|
Qi, Y.F.
|
|
|
168 |
C |
p.
|
artikel
|
| 22 |
Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM
|
de Orio, R.L.
|
|
|
168 |
C |
p.
|
artikel
|
| 23 |
Scaled resistively-coupled VO2 oscillators for neuromorphic computing
|
Corti, Elisabetta
|
|
|
168 |
C |
p.
|
artikel
|
| 24 |
Size effect of electronic properties in highly arsenic-doped silicon nanowires
|
Mauersberger, Tom
|
|
|
168 |
C |
p.
|
artikel
|
| 25 |
Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact
|
Liu, Mingshan
|
|
|
168 |
C |
p.
|
artikel
|
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