| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new static shift register with dynamic transfer
|
Wiedmann, Siegfried K.
|
|
1973
|
16 |
9 |
p. 1007-1010
4 p.
|
artikel
|
| 2 |
An unusual surface breakdown phenomena in lateral transistors
|
Last, J.D.
|
|
1973
|
16 |
9 |
p. 1084-
1 p.
|
artikel
|
| 3 |
Avalanche breakdown voltage of diffused junctions in silicon
|
Wilson, P.R.
|
|
1973
|
16 |
9 |
p. 991-998
8 p.
|
artikel
|
| 4 |
Carrier heating effects in junctions at very low currents
|
Berz, F.
|
|
1973
|
16 |
9 |
p. 1067-1071
5 p.
|
artikel
|
| 5 |
Charge transfer in layered insulators
|
Ferris-Prabhu, A.V.
|
|
1973
|
16 |
9 |
p. 1086-1087
2 p.
|
artikel
|
| 6 |
Effect of ionizing radiation on second breakdown
|
Pontius, D.H.
|
|
1973
|
16 |
9 |
p. 1073-1074
2 p.
|
artikel
|
| 7 |
Field-induced absorption in AuCdS and CU x S-CdS diodes
|
Chang, C.C.
|
|
1973
|
16 |
9 |
p. 1079-1081
3 p.
|
artikel
|
| 8 |
Frequency dependence of C and ΔV/Δ(C−2) of Schottky barriers containing deep impurities
|
Zohta, Yasuhito
|
|
1973
|
16 |
9 |
p. 1029-1035
7 p.
|
artikel
|
| 9 |
Hemispherical GaP:N green electroluminescent diodes
|
Bachrach, R.Z.
|
|
1973
|
16 |
9 |
p. 1037-1038
2 p.
|
artikel
|
| 10 |
Impact ionization current in MOS devices
|
Lattin, W.W.
|
|
1973
|
16 |
9 |
p. 1043-1046
4 p.
|
artikel
|
| 11 |
Influence of surface treatment of silicon on the effective impurity charge density in surface states of MOS structures
|
Csabay, O.
|
|
1973
|
16 |
9 |
p. 985-989
5 p.
|
artikel
|
| 12 |
Matrix analysis of distributed semiconductor circuit models
|
Hennig, F.
|
|
1973
|
16 |
9 |
p. 1081-1083
3 p.
|
artikel
|
| 13 |
Minoritätsträger-diffusionslängen in GaAs-epitaxieschichten—gegenüberstellung verschiedener messverfahren
|
Langmann, Ulrich
|
|
1973
|
16 |
9 |
p. 1011-1015
5 p.
|
artikel
|
| 14 |
New methods for carrier lifetime measurements in PπN structures
|
Collet, J.
|
|
1973
|
16 |
9 |
p. 999-1005
7 p.
|
artikel
|
| 15 |
On the validity of the gradual channel approximation for junction field effect transistors with drift velocity saturation
|
Lehovec, Kurt
|
|
1973
|
16 |
9 |
p. 1047-1053
7 p.
|
artikel
|
| 16 |
The C-V characteristics of Schottky barriers on laboratory grown semiconducting diamonds
|
Glover, G.H.
|
|
1973
|
16 |
9 |
p. 973-978
6 p.
|
artikel
|
| 17 |
Theory of transient photocurrents in totally depleted semiconductors
|
Seibt, W.
|
|
1973
|
16 |
9 |
p. 1017-1028
12 p.
|
artikel
|
| 18 |
Thermodynamic considerations of p-n junction capacitance
|
Heald, David L.
|
|
1973
|
16 |
9 |
p. 1055-1065
11 p.
|
artikel
|
| 19 |
Transient space charge limited currents in light-pulse excited silicon
|
Tove, P.A.
|
|
1973
|
16 |
9 |
p. 961-962
2 p.
|
artikel
|
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