| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new current-routing logic counter
|
Kasperkovitz, D.
|
|
1973
|
16 |
8 |
p. 883-886
4 p.
|
artikel
|
| 2 |
Application of the transmission line equivalent circuit model to the analysis of the PN junction admittance under d.c. bias
|
Smiley, C.F.
|
|
1973
|
16 |
8 |
p. 895-901
7 p.
|
artikel
|
| 3 |
A two-dimensional analysis of indium phosphide junction field effect transistors with long and short channels
|
Himsworth, B.
|
|
1973
|
16 |
8 |
p. 931-939
9 p.
|
artikel
|
| 4 |
Autodoping effects of Ge in vapor-grown GaAs l-x P x layers on the Ge substrates
|
Kasano, Hiroyuki
|
|
1973
|
16 |
8 |
p. 913-920
8 p.
|
artikel
|
| 5 |
Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°K
|
Graff, K.
|
|
1973
|
16 |
8 |
p. 887-893
7 p.
|
artikel
|
| 6 |
Books received
|
|
|
1973
|
16 |
8 |
p. 959-
1 p.
|
artikel
|
| 7 |
Contact conductivity notch effects in indium phosphide microwave oscillators
|
Jervis, B.W.
|
|
1973
|
16 |
8 |
p. 945-950
6 p.
|
artikel
|
| 8 |
Die räumliche verteilung der rekombination in legierten silizium-psn-gleichrichtern bei belastung in durchlassrichtung
|
Dannhäuser, F.
|
|
1973
|
16 |
8 |
p. 861-873
13 p.
|
artikel
|
| 9 |
Electroluminescence dans une heterojonction ZnTe-ZnSe
|
Le Floch, G.
|
|
1973
|
16 |
8 |
p. 941-944
4 p.
|
artikel
|
| 10 |
Electroluminescence from cadmium sulphide MS, MIS and SIS devices
|
Wheeler, D.J.
|
|
1973
|
16 |
8 |
p. 875-882
8 p.
|
artikel
|
| 11 |
Etude du bruit de generation—recombinaison de diodes Gunn
|
De Cacqueray, A.
|
|
1973
|
16 |
8 |
p. 853-860
8 p.
|
artikel
|
| 12 |
Field calculations in Hall samples
|
de Mey, G.
|
|
1973
|
16 |
8 |
p. 955-957
3 p.
|
artikel
|
| 13 |
Ohmic contacts to cadmium sulphide films
|
Allan, Douglas D.M.
|
|
1973
|
16 |
8 |
p. 951-954
4 p.
|
artikel
|
| 14 |
Series equivalent circuit representation of SiO2Si interface and oxide trap states
|
Eaton, D.H.
|
|
1973
|
16 |
8 |
p. 841-846
6 p.
|
artikel
|
| 15 |
Small-signal characteristics of semiconductor punch-through injection and transit-time diodes
|
Wright, G.T.
|
|
1973
|
16 |
8 |
p. 903-912
10 p.
|
artikel
|
| 16 |
The effect of retarding field on the base transport characteristics of planar transistors
|
Basavaraj, T.N.
|
|
1973
|
16 |
8 |
p. 921-929
9 p.
|
artikel
|
| 17 |
The inhomogeneous channel FET: ICFET
|
DeMassa, Thomas A.
|
|
1973
|
16 |
8 |
p. 847-851
5 p.
|
artikel
|
| 18 |
The uniformity of vapor deposited Si3N4 film
|
Parekh, P.C.
|
|
1973
|
16 |
8 |
p. 954-955
2 p.
|
artikel
|
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