| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of silicon and gallium arsenide large signal IMPATT diode behaviour between 10 and 100 GHz
|
Grierson, J.R.
|
|
1973
|
16 |
6 |
p. 719-741
23 p.
|
artikel
|
| 2 |
A generalized Einstein relation for semiconductors
|
Marshak, Alan H.
|
|
1973
|
16 |
6 |
p. 675-679
5 p.
|
artikel
|
| 3 |
Computer study on GaAs Schottky barrier IMPATT diodes
|
Nakamura, Michiharu
|
|
1973
|
16 |
6 |
p. 663-667
5 p.
|
artikel
|
| 4 |
Effect of oxidation on orientation-dependent boron diffusion in silicon
|
Allen, W.G.
|
|
1973
|
16 |
6 |
p. 709-717
9 p.
|
artikel
|
| 5 |
Nyquist's theorem for non-linear resistors
|
van der Ziel, A.
|
|
1973
|
16 |
6 |
p. 751-752
2 p.
|
artikel
|
| 6 |
On the variation of cut-off frequency with emitter end concentration of a diffused base transistor
|
Daw, A.N.
|
|
1973
|
16 |
6 |
p. 669-673
5 p.
|
artikel
|
| 7 |
Photoresponses of MOS-FET
|
Okamoto, K.
|
|
1973
|
16 |
6 |
p. 657-662
6 p.
|
artikel
|
| 8 |
Polycrystalline silicon resistors for integrated circuits
|
King, F.D.
|
|
1973
|
16 |
6 |
p. 701-708
8 p.
|
artikel
|
| 9 |
Reverse current characteristics of some imperfect Schottky barriers
|
Ladbrooke, P.H.
|
|
1973
|
16 |
6 |
p. 743-749
7 p.
|
artikel
|
| 10 |
The influence of auger recombination on the forward characteristic of semiconductor power rectifiers at high current densities
|
Nilsson, N.G.
|
|
1973
|
16 |
6 |
p. 681-688
8 p.
|
artikel
|
| 11 |
Transient space-charge phenomena in semiconductors at high electric fields
|
Dalal, Vikram L.
|
|
1973
|
16 |
6 |
p. 689-699
11 p.
|
artikel
|
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