| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A two-dimensional mathematical model of the insulated-gate field-effect transistor
|
Mock, M.S.
|
|
1973
|
16 |
5 |
p. 601-609
9 p.
|
artikel
|
| 2 |
Calculation of avalanche breakdown voltage and depletion layer thickness in a P−N junction with a double error function doping profile
|
Bakowski, M.
|
|
1973
|
16 |
5 |
p. 611-616
6 p.
|
artikel
|
| 3 |
Carrier concentration in the inversion layer of a MOS field effect transistor
|
Laur, J.
|
|
1973
|
16 |
5 |
p. 644-646
3 p.
|
artikel
|
| 4 |
Carrier heating or cooling in semiconductor devices
|
Sánchez, M.
|
|
1973
|
16 |
5 |
p. 549-557
9 p.
|
artikel
|
| 5 |
Charge injection into SiO2 from reverse-biased junctions
|
Bosselaar, C.A.
|
|
1973
|
16 |
5 |
p. 648-651
4 p.
|
artikel
|
| 6 |
Collector models for bipolar transistors
|
De Graaff, H.C.
|
|
1973
|
16 |
5 |
p. 587-600
14 p.
|
artikel
|
| 7 |
Current-voltage characteristics and capacitance of single grain boundaries in semiconducting BaTiO3 ceramics
|
Gerthsen, P.
|
|
1973
|
16 |
5 |
p. 617-618
2 p.
|
artikel
|
| 8 |
Diffusion of cadmium into InSb
|
Catagnus, P.C.
|
|
1973
|
16 |
5 |
p. 633-634
2 p.
|
artikel
|
| 9 |
Ein modell des korngrenzenwiderstandes in dotierter BaTiO3-keramik
|
Hoffmann, B.
|
|
1973
|
16 |
5 |
p. 623-628
6 p.
|
artikel
|
| 10 |
Fabrication of ZnSi Schottky barrier diode by controlling the substrate temperature during evaporation
|
Chang, C.Y.
|
|
1973
|
16 |
5 |
p. 646-648
3 p.
|
artikel
|
| 11 |
High-resolution SEM observation of semiconductor device cross-sections
|
Meieran, E.S.
|
|
1973
|
16 |
5 |
p. 545-546
2 p.
|
artikel
|
| 12 |
Lattice interaction noise of hot carriers in single injection solid state diodes
|
Gisolf, A.
|
|
1973
|
16 |
5 |
p. 571-580
10 p.
|
artikel
|
| 13 |
On the interpretation of high field effects in chalcogenide thin films
|
Marshall, J.M.
|
|
1973
|
16 |
5 |
p. 629-631
3 p.
|
artikel
|
| 14 |
Radiation from double injection devices
|
Ashley, K.L.
|
|
1973
|
16 |
5 |
p. 641-643
3 p.
|
artikel
|
| 15 |
Small-signal analysis of punch-through injection microwave devices
|
Sjölund, A.
|
|
1973
|
16 |
5 |
p. 559-569
11 p.
|
artikel
|
| 16 |
The calculation of carrier concentrations in silicon in the medium and high temperature regions
|
Heasell, E.L.
|
|
1973
|
16 |
5 |
p. 651-655
5 p.
|
artikel
|
| 17 |
The new switching effect in liquid selenium
|
Gobrecht, H.
|
|
1973
|
16 |
5 |
p. 637-638
2 p.
|
artikel
|
| 18 |
Thermal noise measurements on space-charge-limited hole current in silicon
|
Golder, J.
|
|
1973
|
16 |
5 |
p. 581-585
5 p.
|
artikel
|
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