| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Avalanche breakdown voltage of multiple epitaxial pn junctions
|
Sunshine, R.A.
|
|
1973
|
16 |
4 |
p. 459-462
4 p.
|
article
|
| 2 |
Control of impurity density in homoepitaxial semiconductor layers grown by sublimation at UHV
|
Bennett, R.J.
|
|
1973
|
16 |
4 |
p. 497-501
5 p.
|
article
|
| 3 |
Diode characteristics and edge effects of metal-semiconductor diodes
|
Tove, P.A.
|
|
1973
|
16 |
4 |
p. 513-521
9 p.
|
article
|
| 4 |
Electroluminescent AuGaP diodes
|
Margaritondo, G.
|
|
1973
|
16 |
4 |
p. 523-527
5 p.
|
article
|
| 5 |
Ion-implanted bipolar transistor carrier concentration profiles
|
Barnoski, M.K.
|
|
1973
|
16 |
4 |
p. 433-434
2 p.
|
article
|
| 6 |
Microwave characteristics of ion-implanted bipolar transistors
|
Barnoski, M.K.
|
|
1973
|
16 |
4 |
p. 441-442
2 p.
|
article
|
| 7 |
MIS array potential calculation
|
Chang, W.H.
|
|
1973
|
16 |
4 |
p. 491-496
6 p.
|
article
|
| 8 |
Mosfet devices with trapezoidal gates: I–V characteristics and magnetic sensitivity
|
Mohan Rao, G.R.
|
|
1973
|
16 |
4 |
p. 483-488
6 p.
|
article
|
| 9 |
MOS surface potential and the gross nonuniformity
|
Lopez, A.D.
|
|
1973
|
16 |
4 |
p. 507-511
5 p.
|
article
|
| 10 |
PbS photodiodes fabricated by Sb+ ion implantation
|
Donnelly, J.P.
|
|
1973
|
16 |
4 |
p. 529-534
6 p.
|
article
|
| 11 |
Semiconductor and semi-insulator resistivity measurements using a direct current four point probe apparatus with non-penetrating tips
|
Heilig, K.
|
|
1973
|
16 |
4 |
p. 503-506
4 p.
|
article
|
| 12 |
Small-signal design theory and experiment for the punch-through injection transit-time oscillator
|
Wright, G.T.
|
|
1973
|
16 |
4 |
p. 535-544
10 p.
|
article
|
| 13 |
The effect of a buried layer on the collector breakdown voltages of bipolar junction transistors
|
Hewlett Jr., F.W.
|
|
1973
|
16 |
4 |
p. 453-456
4 p.
|
article
|
| 14 |
The specific contact resistance of Pd2Si contacts on n- and p-Si
|
Shepela, A.
|
|
1973
|
16 |
4 |
p. 477-481
5 p.
|
article
|
| 15 |
Transition-capacitance calculations for double-diffused p-n junctions
|
Bhattacharyya, A.B.
|
|
1973
|
16 |
4 |
p. 467-476
10 p.
|
article
|
Journal description