| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A unified approach to the theory of double injection in solids with traps uniformly and non-uniformly distributed in the energy band gap
|
Hwang, W.
|
|
1973
|
16 |
3 |
p. 407-415
9 p.
|
artikel
|
| 2 |
Books received
|
|
|
1973
|
16 |
3 |
p. 431-
1 p.
|
artikel
|
| 3 |
Determination of galvanomagnetic coefficients by a one-point method
|
Gutai, L.
|
|
1973
|
16 |
3 |
p. 395-406
12 p.
|
artikel
|
| 4 |
Electrical effects of clustered defects in heteroepitaxial Si films
|
Eernisse, E.P.
|
|
1973
|
16 |
3 |
p. 315-325
11 p.
|
artikel
|
| 5 |
Electroluminescence in forward-biased zinc selenide Schottky diodes
|
Livingstone, A.W.
|
|
1973
|
16 |
3 |
p. 351-356
6 p.
|
artikel
|
| 6 |
Errata
|
|
|
1973
|
16 |
3 |
p. 432-
1 p.
|
artikel
|
| 7 |
1 f noise in uniform avalanche diodes
|
Ringo, J.A.
|
|
1973
|
16 |
3 |
p. 327-328
2 p.
|
artikel
|
| 8 |
Memory properties of CdSe single crystals
|
Romeo, N.
|
|
1973
|
16 |
3 |
p. 427-428
2 p.
|
artikel
|
| 9 |
‘Modulation effect by intense hole injection’ in epitaxial silicon Schottky-barrier-diodes
|
Jäger, H.
|
|
1973
|
16 |
3 |
p. 357-364
8 p.
|
artikel
|
| 10 |
Properties of silicon implanted with boron ions through thermal silicon dioxide
|
Bauer, L.-O.
|
|
1973
|
16 |
3 |
p. 289-300
12 p.
|
artikel
|
| 11 |
Schottky-barrier capacitance measurements for deep level impurity determination
|
Bleicher, M.
|
|
1973
|
16 |
3 |
p. 375-380
6 p.
|
artikel
|
| 12 |
Small-signal noise measure of avalanche diodes
|
Kuvås, R.L.
|
|
1973
|
16 |
3 |
p. 329-336
8 p.
|
artikel
|
| 13 |
Small-signal theory of transit-time diodes
|
Antognetti, P.
|
|
1973
|
16 |
3 |
p. 345-350
6 p.
|
artikel
|
| 14 |
The detection of current filaments in VO2 thin-film switches using the scanning electron microscope
|
Beaulieu, R.P.
|
|
1973
|
16 |
3 |
p. 428-429
2 p.
|
artikel
|
| 15 |
The effect of an interfacial layer on minority carrier injection in forward-biased silicon Schottky diodes
|
Card, H.C.
|
|
1973
|
16 |
3 |
p. 365-374
10 p.
|
artikel
|
| 16 |
The electrical properties of anodically grown silicon dioxide films
|
Beynon, J.D.E.
|
|
1973
|
16 |
3 |
p. 309-314
6 p.
|
artikel
|
| 17 |
The influence of substrate properties on microwave losses in thin films of semiconductors
|
Covington, D.W.
|
|
1973
|
16 |
3 |
p. 301-308
8 p.
|
artikel
|
| 18 |
The ON-state in threshold switches
|
Pryor, R.W.
|
|
1973
|
16 |
3 |
p. 425-426
2 p.
|
artikel
|
| 19 |
Thermal limitation for CW output power of a Gunn diode
|
Hasegawa, F.
|
|
1973
|
16 |
3 |
p. 337-344
8 p.
|
artikel
|
| 20 |
Threshold voltage of nonuniformly doped MOS structures
|
Doucet, G.
|
|
1973
|
16 |
3 |
p. 417-423
7 p.
|
artikel
|
| 21 |
Use of a Schottky barrier to measure impact ionization coefficients in semiconductors
|
Woods, M.H.
|
|
1973
|
16 |
3 |
p. 381-394
14 p.
|
artikel
|
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