| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An experimental determination of the carrier lifetime near the SiSiO2 interface
|
Roberts, P.C.T.
|
|
1973
|
16 |
2 |
p. 221-227
7 p.
|
artikel
|
| 2 |
Characterization of boron diffusion from doped oxide source
|
Huang, J.S.T.
|
|
1973
|
16 |
2 |
p. 279-281
3 p.
|
artikel
|
| 3 |
Characterization of p-n junctions under the influence of a time varying mechanical strain
|
Monteith, L.K.
|
|
1973
|
16 |
2 |
p. 229-237
9 p.
|
artikel
|
| 4 |
D.C. electroluminescence in hot-pressed ZnSe diodes
|
Chin, T.N.
|
|
1973
|
16 |
2 |
p. 143-146
4 p.
|
artikel
|
| 5 |
Diffusion effects in the double injection negative-resistance problem
|
Vasi, J.
|
|
1973
|
16 |
2 |
p. 269-275
7 p.
|
artikel
|
| 6 |
Discussion on anomalous diffusion in silicon
|
Jain, R.K.
|
|
1973
|
16 |
2 |
p. 284-287
4 p.
|
artikel
|
| 7 |
Double injection into insulators for non-planar geometry
|
Vasi, J.
|
|
1973
|
16 |
2 |
p. 277-279
3 p.
|
artikel
|
| 8 |
Effect of lateral diffusion on planar resistors
|
Gupta, M.L.
|
|
1973
|
16 |
2 |
p. 281-283
3 p.
|
artikel
|
| 9 |
Field dependence of the capture and re-emission of charge carriers by shallow levels in germanium and silicon
|
Martini, M.
|
|
1973
|
16 |
2 |
p. 129-142
14 p.
|
artikel
|
| 10 |
Investigations on ‘doping stacking fault’ pyramids
|
Vieweg-Gutberlet, F.G.
|
|
1973
|
16 |
2 |
p. 191-195
5 p.
|
artikel
|
| 11 |
Numerical method for the solution of the transient behavior of bipolar semiconductor devices
|
Petersen, O.G.
|
|
1973
|
16 |
2 |
p. 239-251
13 p.
|
artikel
|
| 12 |
On an approximation in space-charge-current theory
|
Murgatroyd, P.N.
|
|
1973
|
16 |
2 |
p. 287-288
2 p.
|
artikel
|
| 13 |
Properties of the tungsten-silicon dioxide interface
|
Powell, R.J.
|
|
1973
|
16 |
2 |
p. 265-267
3 p.
|
artikel
|
| 14 |
Relaxation processes in the chalcogenide glass threshold switches
|
Lee, S.H.
|
|
1973
|
16 |
2 |
p. 155-160
6 p.
|
artikel
|
| 15 |
Resistive MOS-gated diode light sensor
|
Whelan, M.V.
|
|
1973
|
16 |
2 |
p. 161-171
11 p.
|
artikel
|
| 16 |
Spun on arsenolica films as sources for shallow arsenic diffusions with high surface concentration
|
Reindl, K.
|
|
1973
|
16 |
2 |
p. 181-189
9 p.
|
artikel
|
| 17 |
The effect of stress on metal semiconductor junctions
|
Fonash, S.J.
|
|
1973
|
16 |
2 |
p. 253-263
11 p.
|
artikel
|
| 18 |
The growth and properties of luminescent films on silicon
|
Morant, M.J.
|
|
1973
|
16 |
2 |
p. 173-179
7 p.
|
artikel
|
| 19 |
The low temperature strain sensitivity of MOS transistors
|
Gaydon, B.G.
|
|
1973
|
16 |
2 |
p. 147-154
8 p.
|
artikel
|
| 20 |
Theory of a forward-biased diffused-junction p-L-n rectifier—II. Analytical approximations
|
Choo, S.C.
|
|
1973
|
16 |
2 |
p. 197-211
15 p.
|
artikel
|
| 21 |
The Surface Oxide Transistor (SOT)
|
Shewchun, J.
|
|
1973
|
16 |
2 |
p. 213-219
7 p.
|
artikel
|
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