| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aluminium spearing in silicon integrated circuits
|
Price, T.E.
|
|
1973
|
16 |
11 |
p. 1303-1304
2 p.
|
artikel
|
| 2 |
A test for lateral nonuniformities in MOS devices using only capacitance curves
|
Brews, J.R.
|
|
1973
|
16 |
11 |
p. 1267-1277
11 p.
|
artikel
|
| 3 |
Comparison of models for redistribution of dopants in silicon during thermal oxidation
|
Allen, W.G.
|
|
1973
|
16 |
11 |
p. 1283-1287
5 p.
|
artikel
|
| 4 |
Current thresholds in stripe-contact injection lasers
|
Dumke, W.P.
|
|
1973
|
16 |
11 |
p. 1279-1281
3 p.
|
artikel
|
| 5 |
Design criteria for c.w. Gunn oscillators with good frequency-temperature stability
|
De Sa, B.A.E.
|
|
1973
|
16 |
11 |
p. 1261-1266
6 p.
|
artikel
|
| 6 |
Effects of electron bombardment on the noise in junction gate field effect transistors
|
Krishnan, I.N.
|
|
1973
|
16 |
11 |
p. 1233-1240
8 p.
|
artikel
|
| 7 |
Flicker noise compensation in high-impedance MOSFET circuits
|
Lee, S.J.
|
|
1973
|
16 |
11 |
p. 1301-1302
2 p.
|
artikel
|
| 8 |
High capacity liquid phase epitaxy apparatus utilizing thin melts
|
Lorimor, O.G.
|
|
1973
|
16 |
11 |
p. 1289-1292
4 p.
|
artikel
|
| 9 |
MOS threshold shifting by ion implantation
|
Sigmon, Thomas William
|
|
1973
|
16 |
11 |
p. 1217-1232
16 p.
|
artikel
|
| 10 |
Short pulse techniques for estimating the temperature and impurity concentration of the active layer of a Gunn diode
|
Fentem, P.J.
|
|
1973
|
16 |
11 |
p. 1297-1299
3 p.
|
artikel
|
| 11 |
Sperrfreie kontakte an indiumphosphid
|
Becker, R
|
|
1973
|
16 |
11 |
p. 1241-1249
9 p.
|
artikel
|
| 12 |
Transport equations in heavily doped silicon, and the current gain of a bipolar transistor
|
Mock, M.S.
|
|
1973
|
16 |
11 |
p. 1251-1259
9 p.
|
artikel
|
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