| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compact model and TCAD simulation for GaN-gate injection transistor (GIT)
|
Garcia, Frances
|
|
|
151 |
C |
p. 52-59
|
artikel
|
| 2 |
A simple multistep etched termination technique for 4H-SiC GTO thyristors
|
Li, Zhiqiang
|
|
|
151 |
C |
p. 1-5
|
artikel
|
| 3 |
Carbon nanotube Schottky type photodetectors for UV applications
|
Filatzikioti, A.
|
|
|
151 |
C |
p. 27-35
|
artikel
|
| 4 |
Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode
|
Colón, Albert
|
|
|
151 |
C |
p. 47-51
|
artikel
|
| 5 |
Editorial Board
|
|
|
|
151 |
C |
p. ii
|
artikel
|
| 6 |
Investigation of the temperature dependence of random telegraph noise fluctuations in nanoscale polysilicon-channel 3-D Flash cells
|
Nicosia, G.
|
|
|
151 |
C |
p. 18-22
|
artikel
|
| 7 |
Low frequency noise investigation of n-MOSFET single cells for memory applications
|
Ioannidis, E.G.
|
|
|
151 |
C |
p. 36-39
|
artikel
|
| 8 |
Multifunctional graphene sensor for detection of environment signals using a decoupling technique
|
Lee, Junyeong
|
|
|
151 |
C |
p. 40-46
|
artikel
|
| 9 |
Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface
|
Chen, Dingbo
|
|
|
151 |
C |
p. 60-64
|
artikel
|
| 10 |
Power reduction for recovery of a FinFET by electrothermal annealing
|
Han, Joon-Kyu
|
|
|
151 |
C |
p. 6-10
|
artikel
|
| 11 |
Process optimization and device variation of Mg-doped ZnO FBARs
|
Duan, Franklin Li
|
|
|
151 |
C |
p. 11-17
|
artikel
|
| 12 |
Scattering mechanisms in In0.7Ga0.3As/In0.52Al0.48As quantum-well metal-oxidesemiconductor field-effect transistors
|
George, Sethu Merin
|
|
|
151 |
C |
p. 23-26
|
artikel
|
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