| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A ‘four parameters’ model that fits the degradation curve ΔV G (V G ) of MOS transistors under irradiation
|
Buxo, J.
|
|
1972
|
15 |
9 |
p. 1029-1031
3 p.
|
artikel
|
| 2 |
Analysis of large-signal noise in read oscillators
|
Sjölund, A.
|
|
1972
|
15 |
9 |
p. 971-978
8 p.
|
artikel
|
| 3 |
A simplified computational treatment of recombination centers in the transmission line equivalent circuit model of a semiconductor
|
Green, M.A.
|
|
1972
|
15 |
9 |
p. 1027-1029
3 p.
|
artikel
|
| 4 |
A theoretical investigation on the generation current in silicon p-n junctions under reverse bias
|
Calzolari, P.U.
|
|
1972
|
15 |
9 |
p. 1003-1011
9 p.
|
artikel
|
| 5 |
Carrier transport and storage effects in Au ion implanted SiO2 structures
|
Chen, L.I.
|
|
1972
|
15 |
9 |
p. 979-986
8 p.
|
artikel
|
| 6 |
Conductance associated with interface states in MOS tunnel structures
|
Card, H.C.
|
|
1972
|
15 |
9 |
p. 993-998
6 p.
|
artikel
|
| 7 |
Correlation of the Schottky barrier height measurements determined from the capacitance method and the saturation current
|
Hackam, R.
|
|
1972
|
15 |
9 |
p. 1031-1032
2 p.
|
artikel
|
| 8 |
Determination of conduction anisotropies in semiconductors
|
Gaylord, T.K.
|
|
1972
|
15 |
9 |
p. 953-960
8 p.
|
artikel
|
| 9 |
L'effet magnetovoltaïque de surface
|
Viktorovitch, P.
|
|
1972
|
15 |
9 |
p. 1013-1021
9 p.
|
artikel
|
| 10 |
Observation on phenomena associated with a slowly varying surface barrier at niobium oxide and aluminum interface
|
Chiou, Y.L.
|
|
1972
|
15 |
9 |
p. 999-1001
3 p.
|
artikel
|
| 11 |
Potential measurement and stabilization of an isolated target using electron beams
|
Kudirka, P.E.
|
|
1972
|
15 |
9 |
p. 987-992
6 p.
|
artikel
|
| 12 |
SCL-MOST in the triode mode
|
Bandali, M.B.
|
|
1972
|
15 |
9 |
p. 1023-1026
4 p.
|
artikel
|
| 13 |
The diffusion of boron in the SiSiO2 system
|
Wilson, P.R.
|
|
1972
|
15 |
9 |
p. 961-970
10 p.
|
artikel
|
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