| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A thermal oscillator using the thermo-electric (seebeck) effect in silicon
|
Bosch, G.
|
|
1972
|
15 |
8 |
p. 849-850
2 p.
|
artikel
|
| 2 |
Auto-photovoltaic measurement of absorption coefficient and diffusion lengths of light emitting diodes
|
Fulop, W.
|
|
1972
|
15 |
8 |
p. 923-931
9 p.
|
artikel
|
| 3 |
Books received
|
|
|
1972
|
15 |
8 |
p. 951-
1 p.
|
artikel
|
| 4 |
Comments on ‘an experimental verification of the electrostatic field gradient theory for diffused semiconductors’
|
Bhattacharyya, A.B.
|
|
1972
|
15 |
8 |
p. 947-948
2 p.
|
artikel
|
| 5 |
Current-field characteristics of AlAl2O3Al sandwiches in the regions of thermionic and T-F emission
|
Vodenicharov, H.M.
|
|
1972
|
15 |
8 |
p. 933-943
11 p.
|
artikel
|
| 6 |
Effect of the spatially varying minority carrier mobility in the drift transistor
|
Radi, G.
|
|
1972
|
15 |
8 |
p. 883-889
7 p.
|
artikel
|
| 7 |
Erratum
|
|
|
1972
|
15 |
8 |
p. 952-
1 p.
|
artikel
|
| 8 |
Hole diffusion length in high purity n-GaAs
|
Ryan, R.D.
|
|
1972
|
15 |
8 |
p. 865-868
4 p.
|
artikel
|
| 9 |
Influence of dislocations on gold diffusion into thin silicon slices
|
Brotherton, S.D.
|
|
1972
|
15 |
8 |
p. 853-856
4 p.
|
artikel
|
| 10 |
Limitations in microelectronics — II. Bipolar technology
|
Hoeneisen, B.
|
|
1972
|
15 |
8 |
p. 891-897
7 p.
|
artikel
|
| 11 |
Low resistance ohmic contacts to photoconductive CdS
|
Thompson, M.J.
|
|
1972
|
15 |
8 |
p. 861-864
4 p.
|
artikel
|
| 12 |
Medium voltage negative differential conductivity in GaAs split specimens
|
Khokhar, R.U.
|
|
1972
|
15 |
8 |
p. 948-950
3 p.
|
artikel
|
| 13 |
Messung der ladungsträger-konzentrationsverteilung im mittelgebiet eines legierten silizium-psn-gleichrichters bei belastung in durchlassrichtung
|
Krausse, J.
|
|
1972
|
15 |
8 |
p. 841-848
8 p.
|
artikel
|
| 14 |
Observation of gold levels in silicon by MOS capacitance measurements
|
Sixou, P.
|
|
1972
|
15 |
8 |
p. 945-946
2 p.
|
artikel
|
| 15 |
Potentials and direct current in Si-(20 to 40 Å)SiO2-metal structures
|
Kar, S.
|
|
1972
|
15 |
8 |
p. 869-875
7 p.
|
artikel
|
| 16 |
Temperaturverhalten von AunGaAs-Schottkykontakten
|
Engemann, J.
|
|
1972
|
15 |
8 |
p. 899-905
7 p.
|
artikel
|
| 17 |
Thermal noise in double injection diodes operating in the insulator regime
|
Zijlstra, R.J.J.
|
|
1972
|
15 |
8 |
p. 877-881
5 p.
|
artikel
|
| 18 |
The temperature variation of the electron diffusion length and the internal quantum efficiency in GaAs electroluminescent diodes
|
Bahraman, A.
|
|
1972
|
15 |
8 |
p. 907-917
11 p.
|
artikel
|
| 19 |
Wave-guiding properties of stripe-geometry double heterostructure injection lasers
|
Cross, M.
|
|
1972
|
15 |
8 |
p. 919-921
3 p.
|
artikel
|
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