| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Depletion layer formation, space-charge injection and current-voltage characteristics for the silicon p-n-p (n-p-n) structure
|
Wright, G.T.
|
|
1972
|
15 |
4 |
p. 381-386
6 p.
|
artikel
|
| 2 |
Design and fabrication of high burnt-out Schottky barrier crystal video diodes
|
Macpherson, A.C.
|
|
1972
|
15 |
4 |
p. 409-415
7 p.
|
artikel
|
| 3 |
Field profile in n-GaAs layer biased above transferred-electron threshold
|
Dean, R.H.
|
|
1972
|
15 |
4 |
p. 417-429
13 p.
|
artikel
|
| 4 |
Frequency-temperature relationships of X-band Gunn oscillators
|
Hobson, G.S.
|
|
1972
|
15 |
4 |
p. 431-441
11 p.
|
artikel
|
| 5 |
High-frequency fall-off of Impatt diode efficiency
|
Misawa, T.
|
|
1972
|
15 |
4 |
p. 457-465
9 p.
|
artikel
|
| 6 |
IOTA, a new computer controlled thin film thickness measurement tool
|
Konnerth, K.L.
|
|
1972
|
15 |
4 |
p. 371-380
10 p.
|
artikel
|
| 7 |
Minority carrier diffusion length in liquid epitaxial GaP
|
Smith, B.L.
|
|
1972
|
15 |
4 |
p. 361-370
10 p.
|
artikel
|
| 8 |
On the post-injection voltage decay of p-s-n rectifiers at high injection levels
|
Schlangenotto, H.
|
|
1972
|
15 |
4 |
p. 393-402
10 p.
|
artikel
|
| 9 |
Pb1−x Sn xTe photovoltaic diodes and diode lasers produced by proton bombardment
|
Donnelly, J.P.
|
|
1972
|
15 |
4 |
p. 403-407
5 p.
|
artikel
|
| 10 |
Specific contact resistance of ohmic contacts to gallium arsenide
|
Edwards, W.D.
|
|
1972
|
15 |
4 |
p. 387-392
6 p.
|
artikel
|
| 11 |
Temperature dependence of diffusion capacity of an alloy junction transistor
|
|
|
1972
|
15 |
4 |
p. 467-469
3 p.
|
artikel
|
| 12 |
Temperature dependence of the internal quantum efficiency of spontaneous emission as a function of the beam voltage in electron-beam-excited p-type GaAs
|
|
|
1972
|
15 |
4 |
p. 470-472
3 p.
|
artikel
|
| 13 |
The growth and properties of LPE GaAs
|
Vilms, J.
|
|
1972
|
15 |
4 |
p. 443-452
10 p.
|
artikel
|
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