| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A new approach to double injection
|
Schwob, H.P.
|
|
1972
|
15 |
3 |
p. 271-276
6 p.
|
article
|
| 2 |
Design and performance of small-signal microwave transistors
|
Archer, J.A.
|
|
1972
|
15 |
3 |
p. 249-258
10 p.
|
article
|
| 3 |
Determination of low energy barriers in metal-insulator-metal tunneling junctions
|
Gundlach, K.H.
|
|
1972
|
15 |
3 |
p. 329-333
5 p.
|
article
|
| 4 |
Drain-source capacity of junction field effect transistor
|
Misra, M.
|
|
1972
|
15 |
3 |
p. 325-327
3 p.
|
article
|
| 5 |
Effects of base doping and width on the JV characteristics of the n +−n−p + structure
|
Graham Jr, E.D.
|
|
1972
|
15 |
3 |
p. 303-310
8 p.
|
article
|
| 6 |
Low level currents in insulated gate field effect transistors
|
Barron, M.B.
|
|
1972
|
15 |
3 |
p. 293-302
10 p.
|
article
|
| 7 |
Magnetodiode model
|
Pfleiderer, H.
|
|
1972
|
15 |
3 |
p. 335-353
19 p.
|
article
|
| 8 |
Potential distributions in surface PN junctions
|
Hill, J.S.
|
|
1972
|
15 |
3 |
p. 265-270
6 p.
|
article
|
| 9 |
Preparation and properties of vapour phase epitaxial silicon carbide diodes
|
Gramberg, G.
|
|
1972
|
15 |
3 |
p. 285-286
2 p.
|
article
|
| 10 |
Recombination dependent characteristics of silicon P +−N−N + epitaxial diodes
|
Venkateswaran, K.
|
|
1972
|
15 |
3 |
p. 311-320
10 p.
|
article
|
| 11 |
Relaxation-case diode in a magnetic field
|
Queisser, H.J.
|
|
1972
|
15 |
3 |
p. 358-360
3 p.
|
article
|
| 12 |
Resistivity of chemically deposited polycrystalline-silicon films
|
Joseph, J.D.
|
|
1972
|
15 |
3 |
p. 355-358
4 p.
|
article
|
| 13 |
Semiconductors' characterization: Kinetics of one energy-level recombination centers and surface states
|
Chiabrera, A.
|
|
1972
|
15 |
3 |
p. 277-284
8 p.
|
article
|
| 14 |
The lattice contraction coefficient of boron and phosphorus in silicon
|
McQuhae, K.G.
|
|
1972
|
15 |
3 |
p. 259-264
6 p.
|
article
|
Journal description