| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A complementary MOS 1.2 volt watch circuit using ion implantation
|
Coppen, P.J.
|
|
1972
|
15 |
2 |
p. 165-174
10 p.
|
artikel
|
| 2 |
A fast algorithm for the calculation of junction capacitance and its application for impurity profile determination
|
De Man, H.J.J.
|
|
1972
|
15 |
2 |
p. 177-187
11 p.
|
artikel
|
| 3 |
Analysis of epitaxial layer thickness variability in the fabrication of high performance bipolar transistors
|
Kennedy, D.P.
|
|
1972
|
15 |
2 |
p. 203-213
11 p.
|
artikel
|
| 4 |
A scanning electron microscope study of the cathodoluminescence in GaP led material
|
Lidgard, G.
|
|
1972
|
15 |
2 |
p. 159-164
6 p.
|
artikel
|
| 5 |
Effective surface mobility theory
|
Rutledge, J.L.
|
|
1972
|
15 |
2 |
p. 215-219
5 p.
|
artikel
|
| 6 |
10 GHz Si Schottky-barrier IMPATT diode with hyperabrupt impurity distribution produced by ion implantation
|
Misawa, T.
|
|
1972
|
15 |
2 |
p. 189-193
5 p.
|
artikel
|
| 7 |
Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si
|
Kar, S.
|
|
1972
|
15 |
2 |
p. 221-237
17 p.
|
artikel
|
| 8 |
Interpretation of capacitance vs. voltage measurements of p-n junctions
|
Carter, W.E.
|
|
1972
|
15 |
2 |
p. 195-201
7 p.
|
artikel
|
| 9 |
Models for contacts to planar devices
|
Berger, H.H.
|
|
1972
|
15 |
2 |
p. 145-158
14 p.
|
artikel
|
| 10 |
Photoyield decay characteristics of a cesiated GaAs photocathode
|
Yee, E.M.
|
|
1972
|
15 |
2 |
p. 245-247
3 p.
|
artikel
|
| 11 |
Range and straggle of boron in photoresist
|
Baccarani, G.
|
|
1972
|
15 |
2 |
p. 239-243
5 p.
|
artikel
|
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