| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A simple method for determining static parameters of large signal semiconductor diode and transistor models
|
Zaniolo, C.
|
|
1972
|
15 |
12 |
p. 1295-1302
8 p.
|
artikel
|
| 2 |
A two-dimensional analysis of gallium arsenide junction field effect transistors with long and short channels
|
Himsworth, B.
|
|
1972
|
15 |
12 |
p. 1353-1361
9 p.
|
artikel
|
| 3 |
Avalanche breakdown in silicon diffused junctions
|
Warner Jr., R.M.
|
|
1972
|
15 |
12 |
p. 1303-1318
16 p.
|
artikel
|
| 4 |
Comments and extensions regarding the concept of demarcation levels
|
Meirsschaut, S.
|
|
1972
|
15 |
12 |
p. 1327-1330
4 p.
|
artikel
|
| 5 |
Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—I
|
Dannhäuser, F.
|
|
1972
|
15 |
12 |
p. 1371-1375
5 p.
|
artikel
|
| 6 |
Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—II
|
Krausse, J.
|
|
1972
|
15 |
12 |
p. 1377-1381
5 p.
|
artikel
|
| 7 |
Electroluminescence in reverse-biassed zinc selenide Schottky diodes
|
Allen, J.W.
|
|
1972
|
15 |
12 |
p. 1363-1369
7 p.
|
artikel
|
| 8 |
GaAsGaAlAs heterojunction transistor for high frequency operation
|
Dumke, W.P.
|
|
1972
|
15 |
12 |
p. 1339-1343
5 p.
|
artikel
|
| 9 |
Instabilities and small-signal response of double injection structures with deep traps
|
Weber, W.H.
|
|
1972
|
15 |
12 |
p. 1277-1292
16 p.
|
artikel
|
| 10 |
Light-emitting diode of ZnTeCdS heterojunctions
|
Ota, T.
|
|
1972
|
15 |
12 |
p. 1387-1388
2 p.
|
artikel
|
| 11 |
Noise studies in internal field emission diodes
|
Lecoy, G.
|
|
1972
|
15 |
12 |
p. 1273-1276
4 p.
|
artikel
|
| 12 |
On the measurement of the specific ‘emitter efficiency factor in bipolar transistors’
|
Clark, L.E.
|
|
1972
|
15 |
12 |
p. 1293-1294
2 p.
|
artikel
|
| 13 |
Secondary ionisation and its possible bearing on the performance of a solar cell
|
Deb, S.
|
|
1972
|
15 |
12 |
p. 1389-1391
3 p.
|
artikel
|
| 14 |
Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodes
|
Buckley, W.D.
|
|
1972
|
15 |
12 |
p. 1331-1337
7 p.
|
artikel
|
| 15 |
Thermionic saturation of diffusion currents in transistors
|
Persky, G.
|
|
1972
|
15 |
12 |
p. 1345-1351
7 p.
|
artikel
|
| 16 |
Threshold shift calculations for ion implanted MOS devices
|
MacPherson, M.R.
|
|
1972
|
15 |
12 |
p. 1319-1326
8 p.
|
artikel
|
| 17 |
Zum einfluss von temperprozessen auf widerstandsschwankungen in siliziumeinkristallen
|
Dannhäuser, F.
|
|
1972
|
15 |
12 |
p. 1383-1384
2 p.
|
artikel
|
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