| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Characteristics of p-channel MOS field effect transistors with ion-implanted channels
|
Hswe, M.
|
|
1972
|
15 |
11 |
p. 1237-1243
7 p.
|
artikel
|
| 2 |
Contact resistances of AuGeNi, AuZn and Al to III–V compounds
|
Shih, K.K.
|
|
1972
|
15 |
11 |
p. 1177-1180
4 p.
|
artikel
|
| 3 |
Determination of the temperature distribution of Hall plates by a relaxation method
|
Mimizuka, T.
|
|
1972
|
15 |
11 |
p. 1197-1208
12 p.
|
artikel
|
| 4 |
Frequency stability of gunn oscillators with variation of ambient temperature
|
Edridge, A.L.
|
|
1972
|
15 |
11 |
p. 1187-1196
10 p.
|
artikel
|
| 5 |
Iterative scheme for computer simulation of semiconductor devices
|
Seidman, T.I.
|
|
1972
|
15 |
11 |
p. 1229-1235
7 p.
|
artikel
|
| 6 |
Moat-etched Schottky barrier diode displaying near ideal I–V characteristics
|
Rhee, C.
|
|
1972
|
15 |
11 |
p. 1181-1186
6 p.
|
artikel
|
| 7 |
Optical and electrical characteristics of MgO.Al2O3 spinel and silicon-on-spinel
|
Stein, H.J.
|
|
1972
|
15 |
11 |
p. 1209-1217
9 p.
|
artikel
|
| 8 |
Photoeffects in junction field effect transistors under strong illumination
|
Lehovec, K.
|
|
1972
|
15 |
11 |
p. 1253-1259
7 p.
|
artikel
|
| 9 |
Preswitching electrical properties, ‘forming’, and switching in amorphous chalcogenide alloy threshold and memory devices
|
Bosnell, J.R.
|
|
1972
|
15 |
11 |
p. 1261-1264
4 p.
|
artikel
|
| 10 |
Surface states and insulator traps at the Si3N4GaAs interface
|
Cooper Jr., J.A.
|
|
1972
|
15 |
11 |
p. 1219-1227
9 p.
|
artikel
|
| 11 |
The photoelectret state formation and its temperature dependence in evaporated thin-films of CdS
|
Pillai, P.K.C.
|
|
1972
|
15 |
11 |
p. 1245-1251
7 p.
|
artikel
|
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