nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Admittance of p-n junctions containing traps
|
Oldham, W.G. |
|
1972 |
15 |
10 |
p. 1085-1096 12 p. |
artikel |
2 |
BiSb alloys for magneto-thermoelectric and thermomagnetic cooling
|
Yim, W.M. |
|
1972 |
15 |
10 |
p. 1141-1144 4 p. |
artikel |
3 |
Books received
|
|
|
1972 |
15 |
10 |
p. 1175- 1 p. |
artikel |
4 |
Compound tellurides and their alloys for peltier cooling—A review
|
Yim, W.M. |
|
1972 |
15 |
10 |
p. 1121-1134 14 p. |
artikel |
5 |
Das zünden eines thyristors bei schnellem spannungsanstieg
|
Brosch, R. |
|
1972 |
15 |
10 |
p. 1071-1084 14 p. |
artikel |
6 |
Erratum
|
|
|
1972 |
15 |
10 |
p. 1176- 1 p. |
artikel |
7 |
General transport theory of noise in PN junction-like devices—II. Carrier correlations and fluctuations for high injection
|
Tarng, M.L. |
|
1972 |
15 |
10 |
p. 1055-1069 15 p. |
artikel |
8 |
General transport theory of noise in pn junction-like devices—I. Three-dimensional Green's function formulation
|
van Vliet, K.M. |
|
1972 |
15 |
10 |
p. 1033-1053 21 p. |
artikel |
9 |
Interpretation of steady-state surface photovoltage measurements in epitaxial semiconductor layers
|
Phillips, W.E. |
|
1972 |
15 |
10 |
p. 1097-1102 6 p. |
artikel |
10 |
Low concentration diffusion in silicon under sealed tube conditions
|
Ghoshtagore, R.N. |
|
1972 |
15 |
10 |
p. 1113-1120 8 p. |
artikel |
11 |
Niobium superconductive tunnel diode integrated circuit arrays
|
Hoel, L.S. |
|
1972 |
15 |
10 |
p. 1167-1168 2 p. |
artikel |
12 |
Pn junctions in polycristalline-silicon films
|
Manoliu, J. |
|
1972 |
15 |
10 |
p. 1103-1106 4 p. |
artikel |
13 |
Velocity-field characteristics for L.S.A. operation
|
Hobson, G.S. |
|
1972 |
15 |
10 |
p. 1107-1112 6 p. |
artikel |