| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of space-charge induced negative resistance in linearly graded avalanching silicon p-n junctions
|
Som, B.
|
|
1972
|
15 |
1 |
p. 39-44
6 p.
|
artikel
|
| 2 |
Cathodoluminescence assessment of GaAs1−x P x for light emitting diodes
|
Heath, D.R.
|
|
1972
|
15 |
1 |
p. 21-26
6 p.
|
artikel
|
| 3 |
Determination of impurity profiles in presence of deep levels by the second-harmonic method
|
Schibli, E.G.
|
|
1972
|
15 |
1 |
p. 137-139
3 p.
|
artikel
|
| 4 |
Double injection in PπN silicon devices
|
Knepper, R.W.
|
|
1972
|
15 |
1 |
p. 45-58
14 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
1972
|
15 |
1 |
p. IFC-
1 p.
|
artikel
|
| 6 |
Effects of the substrate on surface state noise in silicon MOS FET's
|
Haslett, J.W.
|
|
1972
|
15 |
1 |
p. 117-131
15 p.
|
artikel
|
| 7 |
Electrical fluctuations in silicon double injection devices
|
Knepper, R.W.
|
|
1972
|
15 |
1 |
p. 59-67
9 p.
|
artikel
|
| 8 |
Electrical properties of CdSPbS heterojunctions
|
Watanabe, Saburo
|
|
1972
|
15 |
1 |
p. 5-10
6 p.
|
artikel
|
| 9 |
Electron beam control of IMPATT diodes
|
Sanderson, A.C.
|
|
1972
|
15 |
1 |
p. 140-142
3 p.
|
artikel
|
| 10 |
GaAs vapor-grown bipolar transistors
|
Nuese, C.J.
|
|
1972
|
15 |
1 |
p. 81-84
4 p.
|
artikel
|
| 11 |
Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rate
|
Buehler, M.G.
|
|
1972
|
15 |
1 |
p. 69-79
11 p.
|
artikel
|
| 12 |
Interfaces and recombination currents in Schottky barrier diodes
|
Ladbrooke, P.H.
|
|
1972
|
15 |
1 |
p. 139-140
2 p.
|
artikel
|
| 13 |
On acoustic emission from ferroelectric crystals
|
Buchman, P.
|
|
1972
|
15 |
1 |
p. 142-144
3 p.
|
artikel
|
| 14 |
On the convergence of Gummel's numerical algorithm
|
Mock, M.S.
|
|
1972
|
15 |
1 |
p. 1-4
4 p.
|
artikel
|
| 15 |
On the study of irradiated MOS structures at very low frequency
|
Sixou, P.
|
|
1972
|
15 |
1 |
p. 133-135
3 p.
|
artikel
|
| 16 |
On the wide-range bias dependence of transistor d.c. and small-signal current gain factors
|
Schmidt, P.
|
|
1972
|
15 |
1 |
p. 107-116
10 p.
|
artikel
|
| 17 |
Small-signal characteristics of lateral transistors
|
Chou, Sunlin
|
|
1972
|
15 |
1 |
p. 27-38
12 p.
|
artikel
|
| 18 |
Surface breakdown in silicon planar diodes equipped with field plate
|
Conti, F.
|
|
1972
|
15 |
1 |
p. 93-105
13 p.
|
artikel
|
| 19 |
The calculation of minority carrier current in diffused emitter regions
|
Choo, S.C.
|
|
1972
|
15 |
1 |
p. 11-20
10 p.
|
artikel
|
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