| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate semi empirical predictive model for doped and undoped double gate MOSFET
|
Cabré, Roger
|
|
2018
|
149 |
C |
p. 23-31
|
artikel
|
| 2 |
Al2O3 thin film multilayer structure for application in RRAM devices
|
Rodrigues, A.N.
|
|
2018
|
149 |
C |
p. 1-5
|
artikel
|
| 3 |
Analyses of current-voltage characteristics using derivative methodology
|
Wang, Wei-Fu
|
|
2018
|
149 |
C |
p. 15-22
|
artikel
|
| 4 |
Analytical expressions for subthreshold swing in FDSOI MOS structures
|
Ghibaudo, G.
|
|
2018
|
149 |
C |
p. 57-61
|
artikel
|
| 5 |
An insight to mobility parameters for AOSTFTs, when the effect of both, localized and free carriers, must be considered to describe the device behavior
|
Hernandez-Barrios, Y.
|
|
2018
|
149 |
C |
p. 32-37
|
artikel
|
| 6 |
Editorial Board
|
|
|
2018
|
149 |
C |
p. ii
|
artikel
|
| 7 |
Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires
|
Razavi, Pedram
|
|
2018
|
149 |
C |
p. 6-14
|
artikel
|
| 8 |
Flicker modeling scheme of liquid crystal displays based on current leakage without information about TFT parameters
|
Kim, Dowon
|
|
2018
|
149 |
C |
p. 38-45
|
artikel
|
| 9 |
Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2
|
Jung, Woo Suk
|
|
2018
|
149 |
C |
p. 52-56
|
artikel
|
| 10 |
Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs
|
Palumbo, Felix
|
|
2018
|
149 |
C |
p. 71-77
|
artikel
|
| 11 |
Methodology to separate channel conductions of two level vertically stacked SOI nanowire MOSFETs
|
Paz, Bruna Cardoso
|
|
2018
|
149 |
C |
p. 62-70
|
artikel
|
| 12 |
Numerical simulation of planar BaSi2 based Schottky junction solar cells toward high efficiency
|
Chen, Lian
|
|
2018
|
149 |
C |
p. 46-51
|
artikel
|
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