| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A distributed gate bistable MOS transistor
|
Fu, H.S.
|
|
1971
|
14 |
9 |
p. 799-804
6 p.
|
artikel
|
| 2 |
An improved microwave silicon MESFET
|
Baechtold, W.
|
|
1971
|
14 |
9 |
p. 783-790
8 p.
|
artikel
|
| 3 |
An investigation of lateral transistors -d.c. characteristics
|
Chou, Sunlin
|
|
1971
|
14 |
9 |
p. 811-826
16 p.
|
artikel
|
| 4 |
Carrier generation rate and effective lifetime in InSb thin films
|
Lile, Derek L.
|
|
1971
|
14 |
9 |
p. 855-863
9 p.
|
artikel
|
| 5 |
Electromagnetic theory of heterostructure injection lasers
|
Adams, M.J.
|
|
1971
|
14 |
9 |
p. 865-883
19 p.
|
artikel
|
| 6 |
Flash X-ray irradiation of P-N junctions: A method to measure minority carrier lifetimes, diffusion constants and generation constants
|
Lindström, J.L.
|
|
1971
|
14 |
9 |
p. 827-833
7 p.
|
artikel
|
| 7 |
Hot electron transport and emission in Au-SiO-Au thin film cathodes
|
Collins, R.A.
|
|
1971
|
14 |
9 |
p. 805-810
6 p.
|
artikel
|
| 8 |
Improved ohmic contacts to n-type GaP devices
|
Nakatsuka, H.
|
|
1971
|
14 |
9 |
p. 849-853
5 p.
|
artikel
|
| 9 |
On the emitter degradation by avalanche breakdown in planar transistors
|
Verwey, J.F.
|
|
1971
|
14 |
9 |
p. 775-782
8 p.
|
artikel
|
| 10 |
On the hysteresis and memory properties of the silicon-silicon nitride system
|
Kendall, E.J.M.
|
|
1971
|
14 |
9 |
p. 791-798
8 p.
|
artikel
|
| 11 |
On the mechanism of ovonic threshold switching
|
Henisch, H.K.
|
|
1971
|
14 |
9 |
p. 765-774
10 p.
|
artikel
|
| 12 |
Reformulation of basic semiconductor transport equations
|
Parrott, J.E.
|
|
1971
|
14 |
9 |
p. 885-899
15 p.
|
artikel
|
| 13 |
The influence of doping gradient on temperature dependence of threshold current density of GaAs-injection lasers
|
Salathé, R.
|
|
1971
|
14 |
9 |
p. 843-847
5 p.
|
artikel
|
| 14 |
The investigation of phosphorus diffusion in evacuated, sealed tubes using tracer methods
|
Fränz, I.
|
|
1971
|
14 |
9 |
p. 835-841
7 p.
|
artikel
|
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