| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A VAMFO-CARIS method for determining thickness of transparent films with small number of interference extrema
|
Jordanov, B.
|
|
1971
|
14 |
8 |
p. 753-756
4 p.
|
artikel
|
| 2 |
Doping dependence of second breakdown in a p-n junction
|
Chen, H.C.
|
|
1971
|
14 |
8 |
p. 747-751
5 p.
|
artikel
|
| 3 |
Effect of oxygen on GaP solar cell characteristics
|
Epstein, A.S.
|
|
1971
|
14 |
8 |
p. 757-760
4 p.
|
artikel
|
| 4 |
Electronic processes in Cu x SCdS photovoltaic cells
|
Lindmayer, J.
|
|
1971
|
14 |
8 |
p. 647-654
8 p.
|
artikel
|
| 5 |
Excess surface currents in p-n junctions and bipolar transistors
|
Esteve, D.
|
|
1971
|
14 |
8 |
p. 693-705
13 p.
|
artikel
|
| 6 |
Experimental results on transient space charge limited currents in p-n junctions
|
Canali, C.
|
|
1971
|
14 |
8 |
p. 661-666
6 p.
|
artikel
|
| 7 |
In-process control of interface properties in the diode array camera tube target
|
Gibbon, C.F.
|
|
1971
|
14 |
8 |
p. 707-721
15 p.
|
artikel
|
| 8 |
Noise of hot holes in space-charge-limited germanium diodes
|
Nicolet, M-A.
|
|
1971
|
14 |
8 |
p. 667-675
9 p.
|
artikel
|
| 9 |
Pinch-off in insulated-gate field effect transistors
|
Armstrong, G.A.
|
|
1971
|
14 |
8 |
p. 760-764
5 p.
|
artikel
|
| 10 |
The distribution of mobile carriers in the pinch-off region of an insulated-gate field-effect transistor and its influence on device breakdown
|
Armstrong, G.A.
|
|
1971
|
14 |
8 |
p. 723-733
11 p.
|
artikel
|
| 11 |
Turn-off transient behaviour of p-i-n diodes
|
Varshney, R.C.
|
|
1971
|
14 |
8 |
p. 735-740
6 p.
|
artikel
|
| 12 |
Variable hue GaP diodes
|
Rosenzweig, W.
|
|
1971
|
14 |
8 |
p. 655-660
6 p.
|
artikel
|
| 13 |
Variations de l'impedance d'un cristal de type N, soumis a une polarisation continue. Existence d'un maximum de la capacite differentielle
|
Meaudre, R.
|
|
1971
|
14 |
8 |
p. 685-691
7 p.
|
artikel
|
| 14 |
Zero-bias contact resistances of AuGaAs Schottky barriers
|
McColl, M.
|
|
1971
|
14 |
8 |
p. 677-683
7 p.
|
artikel
|
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