| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An investigation of lateral diffusion in silicon
|
Townsend, W.G.
|
|
1971
|
14 |
7 |
p. 551-556
6 p.
|
artikel
|
| 2 |
Anomalous diffusion of Al into SiC
|
van Opdorp, C.
|
|
1971
|
14 |
7 |
p. 613-625
13 p.
|
artikel
|
| 3 |
Books received
|
|
|
1971
|
14 |
7 |
p. 645-
1 p.
|
artikel
|
| 4 |
Charge neutrality in semiconductors with implanted impurity profiles
|
Grimshaw, J.A.
|
|
1971
|
14 |
7 |
p. 603-611
9 p.
|
artikel
|
| 5 |
Determination of optical ionization cross sections in GaP using charge storage and impurity photovoltaic effect
|
Björklund, G.
|
|
1971
|
14 |
7 |
p. 589-601
13 p.
|
artikel
|
| 6 |
On distinguishing between Schottky and Poole-Frenkel effect in insulators
|
Antula, J.
|
|
1971
|
14 |
7 |
p. 643-
1 p.
|
artikel
|
| 7 |
Photovoltaic and electron-voltaic properties of diffused and Schottky barrier GaAs diodes
|
Kalibjian, R.
|
|
1971
|
14 |
7 |
p. 529-540
12 p.
|
artikel
|
| 8 |
Some investigations on evaporated AuCdS-type metal-semiconductor barriers
|
Köhler, R.
|
|
1971
|
14 |
7 |
p. 581-584
4 p.
|
artikel
|
| 9 |
Specific contact resistance of metal-semiconductor barriers
|
Chang, C.Y.
|
|
1971
|
14 |
7 |
p. 541-550
10 p.
|
artikel
|
| 10 |
Surface charges induced by mechanical stresses in the silicon-silicon oxide interface
|
Friedrich, H.
|
|
1971
|
14 |
7 |
p. 639-641
3 p.
|
artikel
|
| 11 |
Surface diffusion of gold on silicon
|
Huntley, F.A.
|
|
1971
|
14 |
7 |
p. 641-642
2 p.
|
artikel
|
| 12 |
Temperature dependence of ionization rates in Al x Ga1-x As
|
Yeh, C.
|
|
1971
|
14 |
7 |
p. 557-562
6 p.
|
artikel
|
| 13 |
The effect of a localized deformation upon the common-emitter transistor current gain
|
Djurić, Z.
|
|
1971
|
14 |
7 |
p. 627-637
11 p.
|
artikel
|
| 14 |
The measurement of interface state charge in the MOS system
|
Koomen, Jan
|
|
1971
|
14 |
7 |
p. 571-580
10 p.
|
artikel
|
| 15 |
Utilisation de mesures d'effet hall pour la determination simultanee des concentrations de donneurs et accepteurs dans les semiconducteurs: Application au silicium n
|
Roizes, A
|
|
1971
|
14 |
7 |
p. 563-570
8 p.
|
artikel
|
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