| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A liquid phase diffusion from gallium in silicon
|
Lambert, J.L.
|
|
1971
|
14 |
5 |
p. 430-431
2 p.
|
artikel
|
| 2 |
A possibility for the determination of the microscopic mobility of carriers in semiconductors under SCLC conditions
|
Fillard, J.P.
|
|
1971
|
14 |
5 |
p. 371-372
2 p.
|
artikel
|
| 3 |
Electrical characteristics and fluctuation phenomena in semiconductor double injection devices
|
Jordan, A.G.
|
|
1971
|
14 |
5 |
p. 381-382
2 p.
|
artikel
|
| 4 |
Fluctuation phenomena in single and double injection devices
|
Nicolet, M-A.
|
|
1971
|
14 |
5 |
p. 353-355
3 p.
|
artikel
|
| 5 |
Fringe field corrections for capacitors on thin dielectric layers
|
Séquin, C.H.
|
|
1971
|
14 |
5 |
p. 417-420
4 p.
|
artikel
|
| 6 |
G−R noise experiments in the semiconductor regime of silicon double injection diodes
|
Worch, P.R.
|
|
1971
|
14 |
5 |
p. 383-387
5 p.
|
artikel
|
| 7 |
Impurity concentration dependent density of states and resulting fermi level for silicon
|
Dale Kleppinger, D.
|
|
1971
|
14 |
5 |
p. 407-416
10 p.
|
artikel
|
| 8 |
Noise of germanium pnn + double injection diodes
|
Driedonks, F.
|
|
1971
|
14 |
5 |
p. 373-375
3 p.
|
artikel
|
| 9 |
Noise of hot carriers
|
Friedmann, A.
|
|
1971
|
14 |
5 |
p. 361-363
3 p.
|
artikel
|
| 10 |
Orientation dependence of the diffusion of boron in silicon
|
Allen, W.G.
|
|
1971
|
14 |
5 |
p. 397-406
10 p.
|
artikel
|
| 11 |
Permittivity of GaS at low frequencies
|
Séquin, C.H.
|
|
1971
|
14 |
5 |
p. 421-422
2 p.
|
artikel
|
| 12 |
Preliminary results on GeSnO2Ag space charge structures
|
Fillard, J.P.
|
|
1971
|
14 |
5 |
p. 389-390
2 p.
|
artikel
|
| 13 |
SCLC-noise as a statistical carrier correlation effect
|
Sergiescu, V.
|
|
1971
|
14 |
5 |
p. 357-359
3 p.
|
artikel
|
| 14 |
Some observations on microplasmas in P-I-N diodes
|
Svoboda, V.
|
|
1971
|
14 |
5 |
p. 428-430
3 p.
|
artikel
|
| 15 |
Specific resistance of n + -njunction
|
Gupta, S.C.
|
|
1971
|
14 |
5 |
p. 427-428
2 p.
|
artikel
|
| 16 |
The diffusion of zinc in gallium phosphide under excess phosphorus pressure from a ZnP2 source
|
Widmer, A.E.
|
|
1971
|
14 |
5 |
p. 423-426
4 p.
|
artikel
|
| 17 |
Thermal noise in single and double injection devices
|
Nicolet, M-A.
|
|
1971
|
14 |
5 |
p. 377-380
4 p.
|
artikel
|
| 18 |
Thermal noise in space-charge-limited solid-state diodes with field-dependent mobility and hot carriers
|
Shumka, A.
|
|
1971
|
14 |
5 |
p. 367-369
3 p.
|
artikel
|
| 19 |
The upper frequency limit of the 1 tf noise and the surface relaxation time
|
Feigt, I.
|
|
1971
|
14 |
5 |
p. 391-396
6 p.
|
artikel
|
| 20 |
Trapping noise in solid-state single injection diodes
|
Zijlstra, R.J.J.
|
|
1971
|
14 |
5 |
p. 365-366
2 p.
|
artikel
|
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