| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A deep level in Zn-doped liquid phase epitaxial GaAs
|
Su, J.L.
|
|
1971
|
14 |
3 |
p. 262-264
3 p.
|
artikel
|
| 2 |
A theoretical expression for the impedance of reverse-biased P-N junctions with deep traps
|
Schultz, W.
|
|
1971
|
14 |
3 |
p. 227-231
5 p.
|
artikel
|
| 3 |
Eine spezielle lösung für instationäre vorgänge im pin—gleichrichter
|
Benda, H.
|
|
1971
|
14 |
3 |
p. 233-237
5 p.
|
artikel
|
| 4 |
Gate noise in MOS fet's at moderately high frequencies
|
Haslett, J.W.
|
|
1971
|
14 |
3 |
p. 239-245
7 p.
|
artikel
|
| 5 |
High-temperature behavior of GaAs junctions prepared by different techniques
|
Behrndt, Klaus H.
|
|
1971
|
14 |
3 |
p. 191-198
8 p.
|
artikel
|
| 6 |
Impurity concentration dependence of the density of states in semiconductors
|
Kleppinger, D.Dale
|
|
1971
|
14 |
3 |
p. 199-206
8 p.
|
artikel
|
| 7 |
Influence of junction capacitance on diode recovery measurements
|
Mielke, W.
|
|
1971
|
14 |
3 |
p. 260-261
2 p.
|
artikel
|
| 8 |
Measurement of resistivity of silicon by the spreading resistance method
|
Severin, P.J.
|
|
1971
|
14 |
3 |
p. 247-248
2 p.
|
artikel
|
| 9 |
On the behaviour of currents going through MOS structures under ionizing radiations
|
Esteve, D.
|
|
1971
|
14 |
3 |
p. 257-260
4 p.
|
artikel
|
| 10 |
Simple determination of the base transport factor of bipolar transistors
|
Downing, J.P.
|
|
1971
|
14 |
3 |
p. 221-225
5 p.
|
artikel
|
| 11 |
The investigation of the gunn diode operation in a resonator using the computer model
|
Kuznetsov, K.V.
|
|
1971
|
14 |
3 |
p. 207-220
14 p.
|
artikel
|
| 12 |
Variation of the carrier concentration of epitaxial GaAs without addition of dopants
|
Knappett, J.E.
|
|
1971
|
14 |
3 |
p. 185-190
6 p.
|
artikel
|
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