| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A technique for directly plotting the doping profile of semiconductor wafers
|
Salama, C.A.T.
|
|
1971
|
14 |
2 |
p. 178-181
4 p.
|
artikel
|
| 2 |
Books received
|
|
|
1971
|
14 |
2 |
p. 184-
1 p.
|
artikel
|
| 3 |
Boundary conditions at p-n junctions
|
Hauser, J.R.
|
|
1971
|
14 |
2 |
p. 133-139
7 p.
|
artikel
|
| 4 |
Capacitance voltage measurements on n-type InAs MOS diodes
|
Schwartz, R.J.
|
|
1971
|
14 |
2 |
p. 115-124
10 p.
|
artikel
|
| 5 |
Cavity perturbation method for measurement of permittivity and conductivity of medium lossy semiconductors and dielectrics
|
Čičmanec, Pavol
|
|
1971
|
14 |
2 |
p. 153-166
14 p.
|
artikel
|
| 6 |
Der Einfluss von sauerstoff auf lichtempfindlichkeit und bildqualität des Photolacks KTFR
|
Fröschle, E.
|
|
1971
|
14 |
2 |
p. 95-105
11 p.
|
artikel
|
| 7 |
Improvement of relaxation method for Hall plates
|
Mimizuka, T.
|
|
1971
|
14 |
2 |
p. 107-110
4 p.
|
artikel
|
| 8 |
On the determination of deep level center energy and concentration by thermally stimulated conductivity measurements using reverse-biased p-n junctions
|
Forbes, L.
|
|
1971
|
14 |
2 |
p. 182-183
2 p.
|
artikel
|
| 9 |
Performance degradation of bidirectional triode thyristors due to di/dt stress
|
Tserng, H.Q.
|
|
1971
|
14 |
2 |
p. 111-113
3 p.
|
artikel
|
| 10 |
Quantum mechanical surface reflection
|
Lee, Tsu-Wei
|
|
1971
|
14 |
2 |
p. 141-152
12 p.
|
artikel
|
| 11 |
Relaxation oscillations and recombination in epitaxial N-type gallium arsenide
|
Acket, G.A.
|
|
1971
|
14 |
2 |
p. 167-174
8 p.
|
artikel
|
| 12 |
Surface structures and photoluminescence of molecular beam epitaxial films of GaAs
|
Cho, A.Y.
|
|
1971
|
14 |
2 |
p. 125-132
8 p.
|
artikel
|
| 13 |
Sur le spectre de bruit en creneaux
|
Martin, J.C.
|
|
1971
|
14 |
2 |
p. 89-93
5 p.
|
artikel
|
| 14 |
Variation of electroluminescence line halfwidth in GaAs diodes
|
Smith, J.Lynn
|
|
1971
|
14 |
2 |
p. 175-178
4 p.
|
artikel
|
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