| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Books received
|
|
|
1971
|
14 |
12 |
p. 1339-
1 p.
|
artikel
|
| 2 |
Breakdown voltage of cylindrical Gaussian P-N junctions
|
Vincent, D.A.
|
|
1971
|
14 |
12 |
p. 1193-1200
8 p.
|
artikel
|
| 3 |
Characteristics of the junction-gate field effect transistor with short channel length
|
Chiu, T.L.
|
|
1971
|
14 |
12 |
p. 1307-1317
11 p.
|
artikel
|
| 4 |
Conductivity and mobility measurements in the space charge region with the method of van der Pauw
|
Pauwels, H.J.
|
|
1971
|
14 |
12 |
p. 1327-1330
4 p.
|
artikel
|
| 5 |
Current transport in metal-semiconductor-metal (MSM) structures
|
Sze, S.M.
|
|
1971
|
14 |
12 |
p. 1209-1218
10 p.
|
artikel
|
| 6 |
Dynamic bulk negative differential conductivity in semiconductors
|
McGroddy, J.C.
|
|
1971
|
14 |
12 |
p. 1219-1224
6 p.
|
artikel
|
| 7 |
Efficient GaAsGa1−x Al xAs heterostructure electroluminescent diodes
|
Ulmer Jr., E.A.
|
|
1971
|
14 |
12 |
p. 1265-1273
9 p.
|
artikel
|
| 8 |
Einfluss des Abstandes Emitter-Basiskontakt auf die Stromverstärkung bipolarer Transistoren
|
Rieder, K.
|
|
1971
|
14 |
12 |
p. 1251-1258
8 p.
|
artikel
|
| 9 |
Electrical and optical properties of ZnTe-GaSb heterojunctions
|
Kamuro, Setsufumi
|
|
1971
|
14 |
12 |
p. 1183-1192
10 p.
|
artikel
|
| 10 |
Electrical characteristics of GaAsP Schottky barrier diodes
|
Neamen, D.A.
|
|
1971
|
14 |
12 |
p. 1319-1323
5 p.
|
artikel
|
| 11 |
Electrical properties of melt-grown silicon monoarsenide
|
Chu, T.L.
|
|
1971
|
14 |
12 |
p. 1259-1263
5 p.
|
artikel
|
| 12 |
Interpretation of surface and bulk effects using the pulsed MIS capacitor
|
Schroder, D.K.
|
|
1971
|
14 |
12 |
p. 1285-1297
13 p.
|
artikel
|
| 13 |
Measurement of intrinsic potential distribution in the transverse direction of an InSb slab
|
Morisaki, H.
|
|
1971
|
14 |
12 |
p. 1336-1338
3 p.
|
artikel
|
| 14 |
Notice to contributors
|
|
|
1971
|
14 |
12 |
p. 1181-
1 p.
|
artikel
|
| 15 |
On heat flow resistance evaluation in avalanche diodes
|
Khandelwal, D.D.
|
|
1971
|
14 |
12 |
p. 1275-1279
5 p.
|
artikel
|
| 16 |
Physical origins of burst noise in transistors
|
Cook Jr, K.B.
|
|
1971
|
14 |
12 |
p. 1237-1242
6 p.
|
artikel
|
| 17 |
Power Schottky diode design and comparison with the junction diode
|
Hoeneisen, B.
|
|
1971
|
14 |
12 |
p. 1225-1236
12 p.
|
artikel
|
| 18 |
Reflection-insensitive Gunn regenerator for pulse communication
|
Hartnagel, H.
|
|
1971
|
14 |
12 |
p. 1331-1333
3 p.
|
artikel
|
| 19 |
Space-charge recombination in a forward-biased diffused p-n junction
|
Choo, S.C.
|
|
1971
|
14 |
12 |
p. 1201-1208
8 p.
|
artikel
|
| 20 |
Study of photoelectret phenomenon and dark depolarization current in evaporated semiconductor films of CdS
|
Pillai, P.K.C.
|
|
1971
|
14 |
12 |
p. 1299-1305
7 p.
|
artikel
|
| 21 |
Technique for the measurement of pyroelectric coefficients
|
Fabel, G.W.
|
|
1971
|
14 |
12 |
p. 1281-1283
3 p.
|
artikel
|
| 22 |
The effects of the field dependence of carrier mobility on the validity of the gradual channel approximation in insulated-gate field-effect transistors
|
Bandali, M.B.
|
|
1971
|
14 |
12 |
p. 1325-1327
3 p.
|
artikel
|
| 23 |
Transistor cutoff frequency falloff at high currents
|
Rey, G.
|
|
1971
|
14 |
12 |
p. 1333-1336
4 p.
|
artikel
|
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