| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Admittance characteristics of a p-n junction diode with narrow diffused region
|
Bhattacharyya, A.B.
|
|
1971
|
14 |
11 |
p. 1113-1118
6 p.
|
artikel
|
| 2 |
A method for the measurement of the turn-on condition in MOS transistors
|
Wallinga, H.
|
|
1971
|
14 |
11 |
p. 1093-1098
6 p.
|
artikel
|
| 3 |
Anomalous forward characteristics of a metal-thin epitaxial silicon junction
|
Burton, C.E.
|
|
1971
|
14 |
11 |
p. 1071-1076
6 p.
|
artikel
|
| 4 |
Applications of the scanning low energy electron probe (SLEEP) for MOS device evaluation
|
Flemming, J.P.
|
|
1971
|
14 |
11 |
p. 1061-1066
6 p.
|
artikel
|
| 5 |
Books received
|
|
|
1971
|
14 |
11 |
p. 1179-
1 p.
|
artikel
|
| 6 |
D.C. measurement of the space charge capacitance and impurity profile beneath the gate of an MOST
|
Shannon, J.M.
|
|
1971
|
14 |
11 |
p. 1099-1106
8 p.
|
artikel
|
| 7 |
Doping dependence of the barrier height of palladium-silicide Schottky-diodes
|
Broom, R.F.
|
|
1971
|
14 |
11 |
p. 1087-1092
6 p.
|
artikel
|
| 8 |
Inhomogeneous channel resistivity field effect devices
|
Demassa, T.A.
|
|
1971
|
14 |
11 |
p. 1107-1112
6 p.
|
artikel
|
| 9 |
Magneto-electrical properties of silicon most structures
|
Kassabov, J.
|
|
1971
|
14 |
11 |
p. 1159-1165
7 p.
|
artikel
|
| 10 |
Negative resistance in silicon doped with gold
|
Antognetti, P.
|
|
1971
|
14 |
11 |
p. 1119-1122
4 p.
|
artikel
|
| 11 |
New aspects of failure mechanism in germanium tunnel diodes
|
Revesz, A.G.
|
|
1971
|
14 |
11 |
p. 1137-1147
11 p.
|
artikel
|
| 12 |
Photo-effects in junction field effect transistors
|
Lehovec, K.
|
|
1971
|
14 |
11 |
p. 1077-1086
10 p.
|
artikel
|
| 13 |
Recombination velocity effects on current diffusion and imref in schottky barriers
|
Crowell, C.R.
|
|
1971
|
14 |
11 |
p. 1149-1157
9 p.
|
artikel
|
| 14 |
Recombination wave diode
|
Antognetti, P.
|
|
1971
|
14 |
11 |
p. 1123-1135
13 p.
|
artikel
|
| 15 |
Temperature dependence of space charge capacitance of silicon carbide diodes
|
Gramberg, G.
|
|
1971
|
14 |
11 |
p. 1067-1070
4 p.
|
artikel
|
| 16 |
The evaluation of geometrical effects in four point probe measurements
|
Green, M.A.
|
|
1971
|
14 |
11 |
p. 1167-1177
11 p.
|
artikel
|
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