| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An experimental verification of the electrostatic field gradient theory for diffused semiconductors
|
Jain, G.C.
|
|
1971
|
14 |
10 |
p. 1015-1021
7 p.
|
artikel
|
| 2 |
Aspects of planar gunn diodes for high CW output power
|
Fallmann, W.F.
|
|
1971
|
14 |
10 |
p. 909-912
4 p.
|
artikel
|
| 3 |
Carrier density fluctuation noise in silicon junction field effect transistors at low temperatures
|
Churchill, M.J.
|
|
1971
|
14 |
10 |
p. 985-993
9 p.
|
artikel
|
| 4 |
Characteristics of an acousto-electric oscillator in the presence of a forcing electrical signal
|
Lahiri, S.K.
|
|
1971
|
14 |
10 |
p. 1049-1053
5 p.
|
artikel
|
| 5 |
Einfluβ des dotierungsprofils auf die eigenschaften hypersensitiver kapazitätsvariationsdioden
|
Olk, G.
|
|
1971
|
14 |
10 |
p. 913-928
16 p.
|
artikel
|
| 6 |
Formation of NiSi and current transport across the NiSi-Si interface
|
Andrews, J.M.
|
|
1971
|
14 |
10 |
p. 901-908
8 p.
|
artikel
|
| 7 |
Grouping of microplasma switching transients in silicon reference diodes
|
Elms, M.
|
|
1971
|
14 |
10 |
p. 1055-1057
3 p.
|
artikel
|
| 8 |
Induced gate noise in MOS FET's
|
Kirk, E.W.
|
|
1971
|
14 |
10 |
p. 945-948
4 p.
|
artikel
|
| 9 |
Irradiation defects and the electrical quality of ion implanted silicon
|
Davies, D.Eirug
|
|
1971
|
14 |
10 |
p. 975-983
9 p.
|
artikel
|
| 10 |
Low temperature noise in most amplifiers
|
Elliott, D.A.
|
|
1971
|
14 |
10 |
p. 1041-1047
7 p.
|
artikel
|
| 11 |
Magnetic sensitivity of a MAGFET of uniform channel current density
|
Mohan Rao, G.R.
|
|
1971
|
14 |
10 |
p. 995-1001
7 p.
|
artikel
|
| 12 |
Noise and y-parameters in mos fet's
|
Rao, P.S.
|
|
1971
|
14 |
10 |
p. 939-944
6 p.
|
artikel
|
| 13 |
Non-equilibrium effects on metal-oxide-semiconductor tunnel currents
|
Clarke, R.A.
|
|
1971
|
14 |
10 |
p. 957-973
17 p.
|
artikel
|
| 14 |
On the frequency response of Ge-magnetodiodes
|
Betko, J.
|
|
1971
|
14 |
10 |
p. 1059-1060
2 p.
|
artikel
|
| 15 |
On the mechanism of switching effects in chalcogenide thin films
|
Suntola, T.
|
|
1971
|
14 |
10 |
p. 933-938
6 p.
|
artikel
|
| 16 |
Optical phase shift measurement (77°K) of carrier decay time in direct GaAsP
|
Scifres, D.R.
|
|
1971
|
14 |
10 |
p. 949-956
8 p.
|
artikel
|
| 17 |
Optical phase shift measurement of carrier decay-time on thin semiconductor samples with surface losses
|
Zwicker, H.R.
|
|
1971
|
14 |
10 |
p. 1023-1033
11 p.
|
artikel
|
| 18 |
Permittivity of β-Ga2O3 at low frequencies
|
Hoeneisen, B.
|
|
1971
|
14 |
10 |
p. 1057-1059
3 p.
|
artikel
|
| 19 |
Stresses and strains in a plate bonded to a substrate: Semiconductor devices
|
Zeyfang, R.
|
|
1971
|
14 |
10 |
p. 1035-1039
5 p.
|
artikel
|
| 20 |
Structural and electrical properties of sublimed GaAs films
|
Yan, G.
|
|
1971
|
14 |
10 |
p. 1003-1013
11 p.
|
artikel
|
| 21 |
Two components of 1/ƒ noise in mos transistors
|
Hawkins, R.J.
|
|
1971
|
14 |
10 |
p. 929-932
4 p.
|
artikel
|
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