| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A gate-width scalable 90-nm MOSFET nonlinear model including DC/RF dispersion effects valid up to 50GHz
|
Yu, Panpan
|
|
2017
|
135 |
C |
p. 53-64
|
artikel
|
| 2 |
Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors
|
Lee, Sunghwan
|
|
2017
|
135 |
C |
p. 94-99
|
artikel
|
| 3 |
Comparison of short-circuit characteristics of trench gate and planar gate U-shaped channel SOI-LIGBTs
|
Zhang, Long
|
|
2017
|
135 |
C |
p. 24-30
|
artikel
|
| 4 |
Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors
|
Estrada, M.
|
|
2017
|
135 |
C |
p. 43-48
|
artikel
|
| 5 |
Design and analysis of different trigger techniques for ESD clamp circuit in 0.5-µm 5V/18V CDMOS process
|
Zhang, Wenjie
|
|
2017
|
135 |
C |
p. 8-13
|
artikel
|
| 6 |
Editorial Board
|
|
|
2017
|
135 |
C |
p. IFC
|
artikel
|
| 7 |
Fabrication and characterization of 395nm ultraviolet GaN light-emitting diodes
|
Lin, Min-Pang
|
|
2017
|
135 |
C |
p. 49-52
|
artikel
|
| 8 |
High frequency characteristic of a monolithic 500°C OpAmp-RC integrator in SiC bipolar IC technology
|
Tian, Ye
|
|
2017
|
135 |
C |
p. 65-70
|
artikel
|
| 9 |
High quality silicon-based substrates for microwave and millimeter wave passive circuits
|
Belaroussi, Y.
|
|
2017
|
135 |
C |
p. 78-84
|
artikel
|
| 10 |
Impact of source/drain and bulk engineering on LFN performance of n- and p-MOSFET
|
Ioannidis, E.G.
|
|
2017
|
135 |
C |
p. 1-7
|
artikel
|
| 11 |
Modeling and control of threshold voltage based on pull-in characteristic for micro self-locked switch
|
Deng, Jufeng
|
|
2017
|
135 |
C |
p. 85-93
|
artikel
|
| 12 |
Monolithic integration of GMR sensors for standard CMOS-IC current sensing
|
De Marcellis, A.
|
|
2017
|
135 |
C |
p. 100-104
|
artikel
|
| 13 |
Monte Carlo modelling of Schottky diode for rectenna simulation
|
Bernuchon, E.
|
|
2017
|
135 |
C |
p. 71-77
|
artikel
|
| 14 |
Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability
|
Samnakay, Rameez
|
|
2017
|
135 |
C |
p. 37-42
|
artikel
|
| 15 |
The investigations of characteristics of Sb2Te as a base phase-change material
|
Liu, Guangyu
|
|
2017
|
135 |
C |
p. 31-36
|
artikel
|
| 16 |
The signal-to-noise ratio and a hidden symmetry of Hall plates
|
Ausserlechner, Udo
|
|
2017
|
135 |
C |
p. 14-23
|
artikel
|
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