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                             10 results found
no title author magazine year volume issue page(s) type
1 A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs Lime, François
 2017
 131 C p. 24-29
6 p.
 article
2 An accurate model for predicting high frequency noise of nanoscale NMOS SOI transistors Shen, Yanfei
 2017
 131 C p. 45-52
8 p.
 article
3 Editorial Board 2017
 131 C p. IFC-
1 p.
 article
4 Fabrication of resistive switching memory structure using double-sided-anodized porous alumina Morishita, Yoshitaka
 2017
 131 C p. 30-33
4 p.
 article
5 Leakage current conduction in metal gate junctionless nanowire transistors Oproglidis, T.A.
 2017
 131 C p. 20-23
4 p.
 article
6 Multi-level resistive switching characteristics of W/Co:TiO2/fluorine-doped tin oxide (FTO) structures Yang, Zhao
 2017
 131 C p. 34-38
5 p.
 article
7 Optical modulation characteristics of graphene supercapacitors at oblique incidence in visible-infrared region Wang, Huan
 2017
 131 C p. 1-8
8 p.
 article
8 Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors Takhar, Kuldeep
 2017
 131 C p. 39-44
6 p.
 article
9 Study of current-mode active pixel sensor circuits using amorphous InSnZnO thin-film transistor for 50-μm pixel-pitch indirect X-ray imagers Cheng, Mao-Hsun
 2017
 131 C p. 53-64
12 p.
 article
10 The development of differential inductors using double air-bridge structure based on integrated passive device technology Li, Yang
 2017
 131 C p. 9-19
11 p.
 article
                             10 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands