| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the impedance field of saturated MOSFETs and drain thermal noise
|
Lee, Kie-Young
|
|
2017
|
130 |
C |
p. 63-69
7 p.
|
artikel
|
| 2 |
Analytical model for thin-film SOI PIN-diode leakage current
|
Schmidt, Andrei
|
|
2017
|
130 |
C |
p. 4-8
5 p.
|
artikel
|
| 3 |
A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects
|
Raksharam,
|
|
2017
|
130 |
C |
p. 33-40
8 p.
|
artikel
|
| 4 |
Charge-based MOSFET model based on the Hermite interpolation polynomial
|
Colalongo, Luigi
|
|
2017
|
130 |
C |
p. 70-74
5 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2017
|
130 |
C |
p. IFC-
1 p.
|
artikel
|
| 6 |
Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface
|
Lee, Tae In
|
|
2017
|
130 |
C |
p. 57-62
6 p.
|
artikel
|
| 7 |
Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors
|
Kuo, Wei-Cheng
|
|
2017
|
130 |
C |
p. 41-44
4 p.
|
artikel
|
| 8 |
Paper-based, sound driven piezoelectric ZnO nanowire devices
|
Bu, Ian Yi-Yu
|
|
2017
|
130 |
C |
p. 1-3
3 p.
|
artikel
|
| 9 |
Performance improvement of IF(CN2)2 meta based N-channel OTFTs and their integration into a stable CMOS inverter
|
Bebiche, S.
|
|
2017
|
130 |
C |
p. 49-56
8 p.
|
artikel
|
| 10 |
Performance optimization of lateral AlGaN/GaN HEMTs with cap gate on 150-mm silicon substrate
|
Sun, Hui
|
|
2017
|
130 |
C |
p. 28-32
5 p.
|
artikel
|
| 11 |
Pt nanoparticles functionalized 3D SnO2 nanoflowers for gas sensor application
|
Liu, Yinglin
|
|
2017
|
130 |
C |
p. 20-27
8 p.
|
artikel
|
| 12 |
Steep subthreshold slope characteristics of body tied to gate NMOSFET in partially depleted SOI
|
Song, Lei
|
|
2017
|
130 |
C |
p. 15-19
5 p.
|
artikel
|
| 13 |
Study of built-in electric field in active region of GaN/InGaN/AlGaNLEDs by electroreflectance spectroscopy
|
Avakyants, Lev P.
|
|
2017
|
130 |
C |
p. 45-48
4 p.
|
artikel
|
| 14 |
Sub-15nm gate-all-around field effect transistors on vertical silicon nanowires
|
Larrieu, G.
|
|
2017
|
130 |
C |
p. 9-14
6 p.
|
artikel
|
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