| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An investigation of inversion layer induced leakage current in abrupt p-n junctions
|
Inkson, J.C.
|
|
1970
|
13 |
8 |
p. 1167-1174
8 p.
|
artikel
|
| 2 |
Copper-doped radiation-resistant n/p-type silicon solar cells
|
Usami, Akira
|
|
1970
|
13 |
8 |
p. 1202-1204
3 p.
|
artikel
|
| 3 |
Epitaxial growth of GaAs on insulating substrates using HCl-H2 vapor transport
|
Gutierrez, W.A.
|
|
1970
|
13 |
8 |
p. 1199-1200
2 p.
|
artikel
|
| 4 |
Interface analysis by x-ray diffraction topography
|
Schiller, C.
|
|
1970
|
13 |
8 |
p. 1163-1164
2 p.
|
artikel
|
| 5 |
Mechanically induced surface damage in gallium arsenide
|
Laister, D.
|
|
1970
|
13 |
8 |
p. 1200-1201
2 p.
|
artikel
|
| 6 |
Metallic contacts for gallium arsenide
|
Paola, C.R.
|
|
1970
|
13 |
8 |
p. 1189-1197
9 p.
|
artikel
|
| 7 |
On the determination of surface recombination velocity from the transient response of MIS structures
|
Salama, C.A.T.
|
|
1970
|
13 |
8 |
p. 1204-1205
2 p.
|
artikel
|
| 8 |
On the Gunn effect in two-valley semiconductors with traps
|
Law, H.C.
|
|
1970
|
13 |
8 |
p. 1119-1124
6 p.
|
artikel
|
| 9 |
On the preparation of epitaxial films of III–V compounds
|
Jain, V.K.
|
|
1970
|
13 |
8 |
p. 1145-1162
18 p.
|
artikel
|
| 10 |
Quantum and temperature effects on capacitance in degenerate P-N junctions
|
Pellegrini, B.
|
|
1970
|
13 |
8 |
p. 1175-1188
14 p.
|
artikel
|
| 11 |
Silicon gate technology
|
Faggin, F.
|
|
1970
|
13 |
8 |
p. 1125-1130
6 p.
|
artikel
|
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