| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A model for computation of second breakdown in transistors
|
Roman, G.
|
|
1970
|
13 |
7 |
p. 961-980
20 p.
|
artikel
|
| 2 |
A null detecting frequency meter operating in the near infra-red using a CdSeGe isotype heterojunction
|
Hampshire, M.J.
|
|
1970
|
13 |
7 |
p. 1073-1075
3 p.
|
artikel
|
| 3 |
Books received
|
|
|
1970
|
13 |
7 |
p. 1118-
1 p.
|
artikel
|
| 4 |
Catastrophic degradation in GaAs laser diodes
|
Shaw, D.A.
|
|
1970
|
13 |
7 |
p. 919-922
4 p.
|
artikel
|
| 5 |
Die Beweglichkeit von Ladungsträgern im Stromkanal von MOS-Transistoren
|
Friedrich, H.
|
|
1970
|
13 |
7 |
p. 1049-1053
5 p.
|
artikel
|
| 6 |
Effect of non-uniform emitter current distribution on power transistor stability
|
Navon, D.
|
|
1970
|
13 |
7 |
p. 981-991
11 p.
|
artikel
|
| 7 |
Effects of image force and tunneling on current transport in metal-semiconductor (Schottky barrier) contacts
|
Rideout, V.L.
|
|
1970
|
13 |
7 |
p. 993-1009
17 p.
|
artikel
|
| 8 |
Electrode effects and bistable switching of amorphous Nb2O5 diodes
|
Hickmott, T.W.
|
|
1970
|
13 |
7 |
p. 1033-1038
6 p.
|
artikel
|
| 9 |
High-field drift velocity of electrons in p-type silicon
|
Su, J.L.
|
|
1970
|
13 |
7 |
p. 1115-1116
2 p.
|
artikel
|
| 10 |
Magnetic surface loading of Gunn oscillators and resulting new devices
|
Hartnagel, H.L.
|
|
1970
|
13 |
7 |
p. 931-936
6 p.
|
artikel
|
| 11 |
Measurement of Hall effect in InSb by self-magnetic field
|
Morisaki, H.
|
|
1970
|
13 |
7 |
p. 911-918
8 p.
|
artikel
|
| 12 |
MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinel
|
Zaininger, K.H.
|
|
1970
|
13 |
7 |
p. 943-948
6 p.
|
artikel
|
| 13 |
New controlled avalanche structure
|
Sigmund, H.
|
|
1970
|
13 |
7 |
p. 925-928
4 p.
|
artikel
|
| 14 |
Numerical corrections for Hall effect measurements in silicon containing Gaussian dopant distributions
|
Johnson, William S.
|
|
1970
|
13 |
7 |
p. 951-956
6 p.
|
artikel
|
| 15 |
Physical model for burst noise in semiconductor devices
|
Hsu, S.T.
|
|
1970
|
13 |
7 |
p. 1055-1056
2 p.
|
artikel
|
| 16 |
Properties of Si diodes prepared by alloying Al into n-type Si with heat pulses from a Nd:YAG laser
|
Harper, F.E.
|
|
1970
|
13 |
7 |
p. 1103-1104
2 p.
|
artikel
|
| 17 |
Random domain triggering in Gunn effect pulse regenerators
|
Hobson, G.S.
|
|
1970
|
13 |
7 |
p. 937-940
4 p.
|
artikel
|
| 18 |
Reverse current-voltage characteristics of metal-silicide Schottky diodes
|
Andrews, J.M.
|
|
1970
|
13 |
7 |
p. 1011-1023
13 p.
|
artikel
|
| 19 |
Temperature and frequency dependencies of the effective density of surface states at silicon-silicon nitride interface
|
Luby, Š.
|
|
1970
|
13 |
7 |
p. 1097-1101
5 p.
|
artikel
|
| 20 |
The hook-emitter transistor: A proposed amplifier with high gain-bandwidth product
|
Kasperkovitz, D.
|
|
1970
|
13 |
7 |
p. 1025-1031
7 p.
|
artikel
|
| 21 |
The influence of platinum in the Si SiO2 system
|
Brotherton, S.D.
|
|
1970
|
13 |
7 |
p. 1113-1115
3 p.
|
artikel
|
| 22 |
The role of edge capacitance in the design of microwave Schottky barrier detector diodes
|
Day, H.M.
|
|
1970
|
13 |
7 |
p. 1111-1113
3 p.
|
artikel
|
| 23 |
Thickness measurement of SiO2 layers by an interference method
|
Popova, L.
|
|
1970
|
13 |
7 |
p. 957-960
4 p.
|
artikel
|
| 24 |
Transient behaviour of a range of P +−N−N + diodes with narrow centre regions
|
Varshney, R.C.
|
|
1970
|
13 |
7 |
p. 1081-1095
15 p.
|
artikel
|
| 25 |
Zur Frage des Schalteffekts in amorphen Halbleitern
|
Heywang, W.
|
|
1970
|
13 |
7 |
p. 1077-1078
2 p.
|
artikel
|
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