| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate numerical steady-state solutions for a diffused one-dimensional junction diode
|
Arandjelovíc, V.
|
|
1970
|
13 |
6 |
p. 865-871
7 p.
|
artikel
|
| 2 |
Analytical design theory for high voltage pin rectifiers
|
Kao, Y.C.
|
|
1970
|
13 |
6 |
p. 825-841
17 p.
|
artikel
|
| 3 |
A new monolithic tristable element
|
Kasperkovitz, D.
|
|
1970
|
13 |
6 |
p. 715-716
2 p.
|
artikel
|
| 4 |
A quasi-static technique for MOS C-V and surface state measurements
|
Kuhn, M.
|
|
1970
|
13 |
6 |
p. 873-885
13 p.
|
artikel
|
| 5 |
Books received
|
|
|
1970
|
13 |
6 |
p. 909-
1 p.
|
artikel
|
| 6 |
Carrier transport across metal-semiconductor barriers
|
Chang, C.Y.
|
|
1970
|
13 |
6 |
p. 727-740
14 p.
|
artikel
|
| 7 |
Complementary transistors in integrated circuits
|
Donald, R.G.
|
|
1970
|
13 |
6 |
p. 815-824
10 p.
|
artikel
|
| 8 |
Driftgeschwindigkeitssättigung bei mos-feldeffekttransistoren
|
Baum, G.
|
|
1970
|
13 |
6 |
p. 789-798
10 p.
|
artikel
|
| 9 |
Inversion layers in abrupt p-n junctions
|
Van de Wiele, F.
|
|
1970
|
13 |
6 |
p. 717-726
10 p.
|
artikel
|
| 10 |
Ionised impurity scattering in silicon surface channels
|
Berz, F.
|
|
1970
|
13 |
6 |
p. 903-906
4 p.
|
artikel
|
| 11 |
MIS electroluminescent diodes in ZnTe
|
Donnelly, J.P.
|
|
1970
|
13 |
6 |
p. 755-758
4 p.
|
artikel
|
| 12 |
Propriétés électriques d'hétérojonctions GeGaAs preparées à partir d'une phase liquide
|
Laugier, A.
|
|
1970
|
13 |
6 |
p. 741-750
10 p.
|
artikel
|
| 13 |
Recombination oscillations in semiconductors with double-carrier injection
|
Brousseau, M.
|
|
1970
|
13 |
6 |
p. 906-908
3 p.
|
artikel
|
| 14 |
Surface state related 1 f noise in p-n junctions
|
Hsu, S.T.
|
|
1970
|
13 |
6 |
p. 843-855
13 p.
|
artikel
|
| 15 |
The investigation of double layers in semiconductor technology
|
Fränz, I.
|
|
1970
|
13 |
6 |
p. 807-814
8 p.
|
artikel
|
| 16 |
Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
|
Sah, C.T.
|
|
1970
|
13 |
6 |
p. 759-788
30 p.
|
artikel
|
| 17 |
Thermal noise in space-charge-limited solid-state diodes
|
Shumka, A.
|
|
1970
|
13 |
6 |
p. 751-754
4 p.
|
artikel
|
| 18 |
The thermal runaway mechanism of second breakdown phenomenon
|
Popescu, Corneliu
|
|
1970
|
13 |
6 |
p. 887-901
15 p.
|
artikel
|
| 19 |
Transient temperature response of an avalanche diode
|
Gibbons, G.
|
|
1970
|
13 |
6 |
p. 799-806
8 p.
|
artikel
|
| 20 |
Use of a double diffused guard ring to obtain near ideal I–V characteristics in Schottky barrier diodes
|
Saltich, J.L.
|
|
1970
|
13 |
6 |
p. 857-863
7 p.
|
artikel
|
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