| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A simple method for the determination of impurity concentrations and profiles in semiconductors
|
Heime, K.
|
|
1970
|
13 |
5 |
p. 710-713
4 p.
|
artikel
|
| 2 |
Bulk trapping effect on carrier diffusion length as determined by the surface photovoltage method: Theory
|
Choo, S.C.
|
|
1970
|
13 |
5 |
p. 609-617
9 p.
|
artikel
|
| 3 |
Characterization of microwave transistors
|
White, M.H.
|
|
1970
|
13 |
5 |
p. 523-542
20 p.
|
artikel
|
| 4 |
Current oscillations caused by recombination centers in semiconductors
|
Law, H.C.
|
|
1970
|
13 |
5 |
p. 659-669
11 p.
|
artikel
|
| 5 |
Influence de la zone laterale sur le comportement haute frequence des transistors
|
Rey, G.
|
|
1970
|
13 |
5 |
p. 671-681
11 p.
|
artikel
|
| 6 |
Measurement of the ionization rates in diffused silicon p-n junctions
|
Van Overstraeten, R.
|
|
1970
|
13 |
5 |
p. 583-608
26 p.
|
artikel
|
| 7 |
Microwave backward diodes in InAs
|
Hopkins, John B.
|
|
1970
|
13 |
5 |
p. 697-705
9 p.
|
artikel
|
| 8 |
Noise sources in transport equations associated with ambipolar diffusion and Shockley-Read recombination
|
Van Vliet, K.M.
|
|
1970
|
13 |
5 |
p. 649-657
9 p.
|
artikel
|
| 9 |
Non-destructive determination of carrier concentration in epitaxial silicon using a total internal reflection technique
|
Gupta, Dinesh C.
|
|
1970
|
13 |
5 |
p. 543-552
10 p.
|
artikel
|
| 10 |
Observations of EE dislocations using Sirtl etchant and their influence on transistor parameters
|
Parekh, P.C.
|
|
1970
|
13 |
5 |
p. 707-710
4 p.
|
artikel
|
| 11 |
On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor
|
Schroder, D.K.
|
|
1970
|
13 |
5 |
p. 577-582
6 p.
|
artikel
|
| 12 |
Open circuit voltage decay behavior of junction devices
|
Choo, S.C.
|
|
1970
|
13 |
5 |
p. 553-564
12 p.
|
artikel
|
| 13 |
Sodium migration through electron-gun evaporated Al2O3 and double layer Al2O3SiO2 structures
|
Abbott, R.A.
|
|
1970
|
13 |
5 |
p. 565-576
12 p.
|
artikel
|
| 14 |
Theory of low frequency noise in Si MOST's
|
Berz, F.
|
|
1970
|
13 |
5 |
p. 631-647
17 p.
|
artikel
|
| 15 |
Tunnel current through AlAl2O3Al structures in the case of non-uniform Al2O3 layer thickness
|
Hurych, Z.
|
|
1970
|
13 |
5 |
p. 683-695
13 p.
|
artikel
|
| 16 |
Use of inductance to control low current switching of avalanche diodes
|
Chiang, K.L.
|
|
1970
|
13 |
5 |
p. 619-629
11 p.
|
artikel
|
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