| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Approximate solution for space-charge-limited currents without neglecting diffusion
|
Sostarich, M.
|
|
1970
|
13 |
3 |
p. 385-388
4 p.
|
artikel
|
| 2 |
A scanning electron beam study of the relationship between the cathodo-luminescence and the electroluminescence efficiencies of GaP diodes
|
Calverley, A.
|
|
1970
|
13 |
3 |
p. 385-388
4 p.
|
artikel
|
| 3 |
A simple dC/dV measurement method and its applications
|
Ambrózy, A.
|
|
1970
|
13 |
3 |
p. 347-353
7 p.
|
artikel
|
| 4 |
Conduction of beam deposited electrons through thin SiO2 films
|
Pickar, K.A.
|
|
1970
|
13 |
3 |
p. 303-307
5 p.
|
artikel
|
| 5 |
Current oscillations in Zn-doped Si p-i-n diodes
|
Blouke, M.M.
|
|
1970
|
13 |
3 |
p. 337-338
2 p.
|
artikel
|
| 6 |
Deep level effects on the small signal capacitance of p-n junctions
|
Schibli, E.
|
|
1970
|
13 |
3 |
p. 392-394
3 p.
|
artikel
|
| 7 |
Die Leitfähigkeitsanomale in Vanadiumdioxid
|
Guntersdorfer, M.
|
|
1970
|
13 |
3 |
p. 355-366
12 p.
|
artikel
|
| 8 |
Doping profile measurements on silicon epitaxial layers with field controlled planar diodes
|
Tihanyi, Jenö
|
|
1970
|
13 |
3 |
p. 309-312
4 p.
|
artikel
|
| 9 |
Instabilities temporelles des transistors MOS—I
|
Rossel, P.
|
|
1970
|
13 |
3 |
p. 257-268
12 p.
|
artikel
|
| 10 |
Integrals involving Gaussian distribution functions
|
Harrett, T.
|
|
1970
|
13 |
3 |
p. 388-392
5 p.
|
artikel
|
| 11 |
Low frequency oscillations in an acousto-electric oscillator
|
Lahiri, S.K.
|
|
1970
|
13 |
3 |
p. 381-382
2 p.
|
artikel
|
| 12 |
Measurement of the effective carrier lifetime by a distortion technique
|
Renbeck, R.B.
|
|
1970
|
13 |
3 |
p. 394-395
2 p.
|
artikel
|
| 13 |
Quantitative analysis of the effects of steady-state illumination on the MOS-capacitor—I
|
Pierret, R.F.
|
|
1970
|
13 |
3 |
p. 269-288
20 p.
|
artikel
|
| 14 |
Quantitative analysis of the effects of steady-state illumination on the MOS-capacitor—II
|
Pierret, R.F.
|
|
1970
|
13 |
3 |
p. 289-302
14 p.
|
artikel
|
| 15 |
Schalteffekte in VO2
|
Guntersdorfer, M.
|
|
1970
|
13 |
3 |
p. 369-372
4 p.
|
artikel
|
| 16 |
Technique used in Hall effect analysis of ion implanted Si and Ge
|
Johansson, N.G.E.
|
|
1970
|
13 |
3 |
p. 317-326
10 p.
|
artikel
|
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