| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of Rb and Cs implantations in silicon by channeling and hall effect measurements
|
Meyer, O.
|
|
1970
|
13 |
10 |
p. 1357-1362
6 p.
|
artikel
|
| 2 |
Double injection in semiconductors heavily doped with deep two-level traps
|
Weber, Willes H.
|
|
1970
|
13 |
10 |
p. 1333-1356
24 p.
|
artikel
|
| 3 |
Gettering of gold and its influence on some transistor parameters
|
Parekh, P.C.
|
|
1970
|
13 |
10 |
p. 1401-1406
6 p.
|
artikel
|
| 4 |
Halleffekt in einer unendlich langen, stromdurchflossenen Halbleiterplatte in einem homogenen magnetfeld mit beliebiger ausrichtung in bezug zum stromdichtevektor J
|
Grün, Uwe
|
|
1970
|
13 |
10 |
p. 1375-1390
16 p.
|
artikel
|
| 5 |
Intermetallic formation in gold-aluminum systems
|
Philofsky, Elliott
|
|
1970
|
13 |
10 |
p. 1391-1394
4 p.
|
artikel
|
| 6 |
Minority carrier storage and oscillation efficiency in read diodes
|
Misawa, T.
|
|
1970
|
13 |
10 |
p. 1369-1374
6 p.
|
artikel
|
| 7 |
On solutions to the diffusion equation
|
Gajda Jr., Walter J.
|
|
1970
|
13 |
10 |
p. 1427-1428
2 p.
|
artikel
|
| 8 |
Saturation current and large-signal operation of a read diode
|
Misawa, T.
|
|
1970
|
13 |
10 |
p. 1363-1368
6 p.
|
artikel
|
| 9 |
Some comments on ‘On solutions to the diffusion equation’
|
Wilson, P.R.
|
|
1970
|
13 |
10 |
p. 1428-1429
2 p.
|
artikel
|
| 10 |
The measurement of doping profiles in thick epitaxial layers of GaP using Schottky barrier C-V data
|
Peaker, A.R.
|
|
1970
|
13 |
10 |
p. 1407-1413
7 p.
|
artikel
|
| 11 |
Transient responses of a pulsed MIS-capacitor
|
Müller, J.
|
|
1970
|
13 |
10 |
p. 1319-1332
14 p.
|
artikel
|
| 12 |
Voltage-current characteristics of GaAs J-FET's in the hot electron range
|
Lehovec, K.
|
|
1970
|
13 |
10 |
p. 1415-1424
10 p.
|
artikel
|
Tijdschrift beschrijving