| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Books received
|
|
|
1970
|
13 |
1 |
p. 95-
1 p.
|
artikel
|
| 2 |
Calculated efficiencies of practical GaAs and Si solar cells including the effect of built-in electric fields
|
Ellis, B.
|
|
1970
|
13 |
1 |
p. 1-24
24 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
1970
|
13 |
1 |
p. IFC-
1 p.
|
artikel
|
| 4 |
Electrical properties of bulk solution grown GaP and GaAs crystals
|
Diguet, D.
|
|
1970
|
13 |
1 |
p. 37-40
4 p.
|
artikel
|
| 5 |
Electrical properties of silicon doped with platinum
|
Carchano, H.
|
|
1970
|
13 |
1 |
p. 83-90
8 p.
|
artikel
|
| 6 |
Epitaxial indium arsenide by vacuum evaporation
|
Godinho, N.
|
|
1970
|
13 |
1 |
p. 47-50
4 p.
|
artikel
|
| 7 |
GaAs Schottky-barrier avalanche diodes
|
Kim, C.K.
|
|
1970
|
13 |
1 |
p. 53-56
4 p.
|
artikel
|
| 8 |
Graphical method for the determination of junction parameters and of multiplication parameters
|
van de Wiele, F.
|
|
1970
|
13 |
1 |
p. 25-36
12 p.
|
artikel
|
| 9 |
Low frequency current oscillations in epitaxial GaAs
|
Conrad, R.W.
|
|
1970
|
13 |
1 |
p. 91-92
2 p.
|
artikel
|
| 10 |
On the analysis of thermostimulated excitation curves
|
Sandomirskiĭ, V.B.
|
|
1970
|
13 |
1 |
p. 69-73
5 p.
|
artikel
|
| 11 |
Preparation and properties of lead-tin telluride photodiodes
|
Rolls, W.
|
|
1970
|
13 |
1 |
p. 75-78
4 p.
|
artikel
|
| 12 |
Preparation of thin film CdSe-CdS systems
|
Yu, H.J.
|
|
1970
|
13 |
1 |
p. 93-94
2 p.
|
artikel
|
| 13 |
Small signal equivalent circuit of an isotype heterojunction dominated by traps
|
Hampshire, M.J.
|
|
1970
|
13 |
1 |
p. 41-46
6 p.
|
artikel
|
| 14 |
Space-charge-limited currents through chromium-cadmium sulphide-chromium diodes
|
Srivastava, S.K.
|
|
1970
|
13 |
1 |
p. 57-60
4 p.
|
artikel
|
| 15 |
The effects of lateral injection and base-widening on the high current-low voltage characteristics of transistors
|
Whittier, R.J.
|
|
1970
|
13 |
1 |
p. 61-68
8 p.
|
artikel
|
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