| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A simple technique for planar Zn diffusions in InSb
|
Lavine, J.M.
|
|
1969
|
12 |
9 |
p. 750-IN16
nvt p.
|
artikel
|
| 2 |
Effect of thermal instability on ultra-high frequency performance of insulated-gate field-effect transistors
|
Kano, K.
|
|
1969
|
12 |
9 |
p. 719-729
11 p.
|
artikel
|
| 3 |
Error analysis of surface state density determination using the MOS capacitance method
|
Sah, C.T.
|
|
1969
|
12 |
9 |
p. 689-709
21 p.
|
artikel
|
| 4 |
Exact analytical solution of high frequency lossless MOS capacitance-voltage characteristics and validity of charge analysis
|
Sah, C.T.
|
|
1969
|
12 |
9 |
p. 681-688
8 p.
|
artikel
|
| 5 |
Generation noise resistance in junction field-effect transistors at pinch-off
|
Haslett, J.W.
|
|
1969
|
12 |
9 |
p. 747-750
4 p.
|
artikel
|
| 6 |
Limitations to the performance of planar gunn effect devices
|
Colliver, D.J.
|
|
1969
|
12 |
9 |
p. 671-672
2 p.
|
artikel
|
| 7 |
Measurement of the effective carrier lifetime by a distortion technique
|
Renbeck, R.B.
|
|
1969
|
12 |
9 |
p. 746-747
2 p.
|
artikel
|
| 8 |
Methoden zur untersuchung inhomogener dotierstoff-verteilung in silicium-einkristallen
|
Vieweg-Gutberlet, F.
|
|
1969
|
12 |
9 |
p. 731-732
2 p.
|
artikel
|
| 9 |
The application of polycrystalline layers of InSb and PbTe to a field-effect transistor
|
Lile, D.
|
|
1969
|
12 |
9 |
p. 735-738
4 p.
|
artikel
|
| 10 |
The built-in voltage of diffused p−n junctions
|
Wilson, P.R.
|
|
1969
|
12 |
9 |
p. 675-680
6 p.
|
artikel
|
| 11 |
The external negative conductance of Gunn oscillators
|
Hobson, G.S.
|
|
1969
|
12 |
9 |
p. 711-717
7 p.
|
artikel
|
| 12 |
Voltage dependence of capacitance of Zn-diffused GaAs diodes
|
Horak, G.
|
|
1969
|
12 |
9 |
p. 743-746
4 p.
|
artikel
|
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